PAD2

Product Technical OrOrdderer Folder Support NowNow InterFET PAD1-2-5 PAD1, PAD2, PAD5 PicoAmp Diode Features TO-18 Bottom View InterFET N0001H Geometry Anode 3 Low Leakage: 0.5pA Typical Low Capacitance: 0.8pF Typical Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Cathode 1 Applications High Impedance Protection Circuits SOT23 Top View Low Power Battery Circuitry High Impedance Diode Switching 1 Anode Cathode Description 3 The -45V InterFET PAD1 and PAD2 are targeted 2 for low power and high impedance applications. Leakages are typically 0.5pA at room Short Pins 1 and 2 Externally temperatures. The TO-18 package is hermetically TO-92 Bottom View sealed and suitable for military applications. For SOT23 functionality pins 1 and 2 must be externally shorted. Cathode 2 Anode 1 Product Summary Parameters PAD1 Min PAD2 Min PAD5 Min Unit BVR Breakdown Reverse Voltage -45 -45 -45 V IR Reverse Current -1 (Max) -2 (Max) -5 (Max) pA V Forward Voltage Drop 1.5 (Max) 1.5 (Max) 1.5 (Max) V F Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging PAD1 PAD2 PAD5 Through-Hole TO-18 Bulk PNPAD1 PNPAD2, PNPAD5 Through-Hole TO-92-2L Bulk SMPPAD1 SMPPAD2 SMPPAD5 Surface Mount SOT23 Bulk SMPPAD1TR SMPPAD2TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPPAD5TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel PAD1COT PAD2COT PAD5COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack PAD1CFT PAD2CFT PAD5CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35301.R01Product Technical OrOrdderer Folder Support NowNow InterFET PAD1-2-5 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 45 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 225 mW D P Power Derating 1.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -55 to 125 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) PAD1 PAD2 PAD5 Parameters Conditions Min Typ Max Min Typ Max Min Typ Max Unit Breakdown BVR IR = -1A -45 -45 -45 V Reverse Voltage I Reverse Current V = -20V -1 -2 -5 pA R R Forward Voltage VF IF = 5mA 0.8 1.5 0.8 1.5 0.8 1.5 V Drop CR Capacitance VR = -5V, f = 1MHz 0.8 0.8 0.8 pF PAD1-2-5 2 of 5 InterFET Corporation Document Number: IF35301.R01 www.InterFET.com November, 2021