Product Technical OrOrdderer Folder Support NowNow InterFET 2N4867-8-9A 2N4867/A, 2N4868/A, 2N4869/A N-Channel JFET TO-72 Bottom View Features InterFET N0016H Geometry Gate 3 Typical Noise: 5 nV/Hz Typical Ciss: 3.5pF Drain 4 Case 2 Low Cutoff Voltage: 2N4867 < 2.0V RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Audio Amplifiers Small Signal Amplifier Source 1 Ultrahigh Impedance Pre-Amplifier Gate 3 Description Drain 2 The -50V InterFET 2N4867/A, 2N4868/A, and 2N4869/A are targeted for Audio and sensitive amplifier stages for mid-frequencies designs. Gate TO-92 Bottom View leakages are typically less than 10pA at room temperatures. The 2N4867/A has a cutoff voltage of less than 2.0V ideal for low-level power Gate 3 supplies. The TO-72 package is hermetically Drain 2 sealed and suitable for military applications. Source 1 Product Summary Parameters 2N4867/A Min 2N4868/A Min 2N4869/A Min Unit BVGSS Gate to Source Breakdown Voltage -40 -40 -40 V I Drain to Source Saturation Current 0.4 1 2.5 mA DSS V Gate to Source Cutoff Voltage -0.7 -1 -1.8 V GS(off) GFS Forward Transconductance 700 1000 1300 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4867 2N4868 2N4869 2N4867A 2N4868A 2N4869A Through-Hole TO-72 Bulk PN4867 PN4868 PN4869 PN4867A PN4868A PN4869A Through-Hole TO-92 Bulk SMP4867 SMP4868 SMP4869 SMP4867A SMP4868A SMP4869A Surface Mount SOT23 Bulk SMP4867TR SMP4868TR SMP4869TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4867ATR SMP4868ATR SMP4869ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4867COT 2N4868COT 2N4869COT Chip Orientated Tray 2N4867ACOT 2N4868ACOT 2N4869ACOT (COT Waffle Pack) COT 400/Waffle Pack 2N4867CFT 2N4868CFT 2N4869CFT Chip Face-up Tray 2N4867ACFT 2N4868ACFT 2N4869ACFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35012.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4867-8-9A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 1.7 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4867/A 2N4868/A 2N4869/A Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 -40 -40 V Breakdown Voltage -0.25 -0.25 -0.25 Gate to Source VGS = -30V, VDS = 0V, TA = 25C nA IGSS Reverse Current V = -30V, V = 0V, T = 150C A GS DS A -0.25 -0.25 -0.25 Gate to Source V V = 20V, I = 1A -0.7 -2 -1 -3 -1.8 -5 V GS(OFF) DS D Cutoff Voltage Drain to Source VDS = 20V, VGS = 0V I 0.4 1.2 1 3 2.5 7.5 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4867/A 2N4868/A 2N4869/A Parameters Conditions Min Max Min Max Min Max Unit Forward G V = 20V, V = 0V, f = 1kHz 700 2000 1000 3000 1300 4000 S FS DS GS Transconductance Output GOS VDS = 20V, VGS = 0V, f = 1kHz 1.5 4 10 S Conductance Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 25 25 25 pF Reverse Transfer C V = 20V, V = 0V, f = 1MHz 5 5 5 pF rss DS GS Capacitance Equivalent Circuit Input V = 10V, V = 0V, f = 10Hz 20 20 20 DS GS nV/ Hz e n Noise Voltage VDS = 10V, VGS = 0V, f = 1kHz 10 10 10 VDS = 10V, VGS = 0V, f = 1kHz Noise Figure 1 1 1 dB NF R = 20 k, A variant R = 5 k G G 2N4867-8-9A 2 of 5 InterFET Corporation Document Number: IF35012.R00 www.InterFET.com December, 2018