Product Technical OrOrdderer Folder Support NowNow InterFET IF3602 IF3602 Dual Matched N-Channel JFET Features TO-78 Bottom View Source InterFET N3600L Geometry 5 Drain Ultra Low Noise: 0.5 nV/Hz Typical 6 High Gain: 750mS Typical Gate 3 7 Gate Low Rds(on): 2.0 Ohms Typical RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications Low-Noise, High Gain Amplifiers Differential Amplifiers Description The -20V InterFET IF3602 JFET is targeted for ultra low noise high gain differential amplifier designs. The IF3602 has a cutoff voltage of less than 2.0V ideal for low voltage applications. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IF3602 Min Unit BV Gate to Source Breakdown Voltage -20 V GSS I Drain to Source Saturation Current 30 mA DSS VGS(off) Gate to Source Cutoff Voltage -0.35 V GFS Forward Transconductance 750 Typical mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF3602T78 Through-Hole TO-78 Bulk IF3602COT * Chip Orientated Tray (COT Waffle Pack) COT 30/Waffle Pack IF3602CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 30/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35077.R00Product Technical OrOrdderer Folder Support NowNow InterFET IF3602 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V -0.1 nA Reverse Current Gate to Source VGS(OFF) VDS = 10V, ID = 0.5nA -0.35 -2.0 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 30 300 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Forward G V = 10V, V = 0V, f = 1kHz 750 mS FS DS GS Transconductance C Input Capacitance V = 0V, V = -4V, f = 1MHz 300 pF iss DS GS Reverse Transfer C V = 0V, V = -4V, f = 1MHz 200 pF rss DS GS Capacitance Equivalent Circuit V = 3V, I = 5mA, f = 100Hz 0.5 DS D nV/ Hz e n Input Noise Voltage Differential Gate V V V = 10V, I = 500pA 100 mV GS1 GS2 DS D Source Voltage IF3602 2 of 4 InterFET Corporation Document Number: IF35077.R00 www.InterFET.com November, 2019