X-On Electronics has gained recognition as a prominent supplier of IFN5434 jfet across the USA, India, Europe, Australia, and various other global locations. IFN5434 jfet are a product manufactured by InterFET. We provide cost-effective solutions for jfet, ensuring timely deliveries around the world.

IFN5434 InterFET

IFN5434 electronic component of InterFET
Images are for reference only
See Product Specifications
Part No.IFN5434
Manufacturer: InterFET
Category:JFET
Description: JFET JFET N-Channel -25V 100mA 300mW 2.4mW
Datasheet: IFN5434 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18 ea
Line Total: USD 18

Availability - 121
Ships to you between
Mon. 10 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33 - WHS 1


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 15.1685
10 : USD 13.524
25 : USD 13.3745
50 : USD 12.627
100 : USD 12.0175
250 : USD 11.638
500 : USD 11.0745
1000 : USD 10.58
2500 : USD 10.1545

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Series
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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We are delighted to provide the IFN5434 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IFN5434 and other electronic components in the JFET category and beyond.

Product Technical OrOrdderer Folder Support NowNow InterFET IFN5432-3-4 IFN5432, IFN5433, IFN5434 N-Channel JFET Features TO-52 Bottom View InterFET N0903L Geometry Gate/Case 3 Low Noise: 0.7 nV/Hz Typical High Gain: 200mS Typical Drain 2 Low Rds(on): 5 Ohms Max (IFN5432) RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications Low On Resistance Switches Choppers Description The -25V InterFET IFN5432, IFN5433, and IFN5434 are targeted for Low resistance switches and choppers. The TO-52 package is hermetically sealed and suitable for military applications. Product Summary Parameters IFN5432 Min IFN5433 Min IFN5434 Min Unit BV Gate to Source Breakdown Voltage -25 -25 -25 V GSS IDSS Drain to Source Saturation Current 150 100 30 mA VGS(off) Gate to Source Cutoff Voltage -4 -3 -1 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN5432 IFN5433 IFN5434 Through-Hole TO-52 Bulk IFN5432COT IFN5433COT IFN5343COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN5432CFT IFN5433CFT IFN5434CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35075.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN5432-3-4 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 100 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN5432 IFN5433 IFN5434 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V V = 0V, I = -1A -25 -25 -25 V (BR)GSS DS G Breakdown Voltage Gate to Source VDS = -15V, VGS = 0V, TA = 25C -200 -200 -200 pA I GSS Reverse Current VDS = -15V, VGS = 0V, TA = 150C -200 -200 -200 nA Gate to Source V V = 5V, I = 3nA -4 -10 -3 -9 -1 -4 V GS(OFF) DS D Cutoff Voltage Drain to Source VGS = 0V, VDS = 15V I 150 100 30 mA DSS Saturation Current (Pulsed) VDS = 5V, VGS = -10V, TA = 25C 200 200 200 pA I Drain Cutoff Current D(OFF) VDS = 5V, VGS = -10V, TA = 150C 200 200 200 nA Drain to Source V V = 0V, I = 10mA 50 70 100 mV DS(ON) GS D ON Voltage Static Drain to Source R V = 0V, I = 10mA 2 5 7 10 DS(ON) GS D ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN5432 IFN5433 IFN5434 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source RDS(ON) VGS = 0V, ID = 0A, f = 1kHz 5 7 10 ON Resistance C Input Capacitance V = 0V, V = -10V, f = 1MHz 60 60 60 pF iss DS GS Reverse Transfer C V = 0V, V = -10V, f = 1MHz 20 20 20 pF rss DS GS Capacitance t Turn-On Delay Time 4 4 4 ns d(ON) tr Rise Time 1 1 1 ns VDD = 1.5V, VGS(ON) = 0V, V = -12V, I = 10mA GS(OFF) D(ON) t Turn-Off Delay Time 6 6 6 ns d(OFF) tf Fall Time 30 30 30 ns IFN5432-3-4 2 of 3 InterFET Corporation Document Number: IF35075.R00 www.InterFET.com December, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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