Databook.fxp 1/13/99 2:09 PM Page B-53 01/99 B-53 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at T = 25C Choppers A Reverse Gate Source & Reverse Gate Drain Voltage 30 V Commutators Continuous Forward Gate Current 50 mA Analog Switches Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/C At 25C free air temperature: J176 J177 Process PJ99 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V 30 30 V I = 1 A, V = V (BR)GSS G DS Gate Reverse Current I 11nAV = 20V, V = V GSS GS DS Gate Source Cutoff Voltage V 1 4 0.8 2.25 V V = 15V, I = 10 nA GS(OFF) DS D Drain Saturation Current (Pulsed) I 2 35 1.5 20 mA V = 15V, V = V DSS DS GS Drain Cutoff Current I 1 1 nA V = 15V, V = 10V D(OFF) DS GS Dynamic Electrical Characteristics Max Max Drain Source ON Resistance r 250 300 V = , V < = 0.1V f = 1 kHz ds(on) GS DS Dynamic Electrical Characteristics Typ Typ Drain Gate Capacitance C 5.5 5.5 pF V = V, V = 10V f = 1 MHz gd DS GS Source Gate Capacitance C 5.5 5.5 pF V = V, V = 10V f = 1 MHz gs DS GS Drain Gate + Source Gate Capacitance C + C 32 32 pF V = V = V f = 1 MHz gd gs DS GS Switching Characteristics J176 J177 Turn ON Delay Time td 15 20 ns (on) V 6 6 V DD Rise Time t 20 25 ns r V 63 V GS(OFF) Turn OFF Delay Time td 15 20 ns (off) R 5.6 k 10 k L Fall Time t 20 25 ns V V f GS(ON) TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ176, SMPJ177 Pin Configuration 1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 www.interfet.com (972) 487-1287 FAX (972) 276-3375