Product Technical OrOrdderer Folder Support NowNow InterFET J304-5 J304, J305 N-Channel JFET Features SOT23 Top View InterFET N0026S Geometry Low Noise: 4 nV/Hz Typical Source 1 Low Ciss: 4.3pF Typical Low Leakage: 10pA Typical Gate 3 RoHS Compliant SMT, TH, and Bare Die Package options. Drain 2 Applications Mixers TO-92 Bottom View Oscillators VHF/UHF Amplifiers Gate 3 Description Drain 2 The -30V InterFET J304 and J305 are targeted for Source 1 low noise low leakage VHF/UHF amplifier designs as well as mixers and oscillators. Gate leakages are typically less than 10pA at room temperatures. Product Summary Parameters J304 Min J305 Min Unit BVGSS Gate to Source Breakdown Voltage -30 -30 V IDSS Drain to Source Saturation Current 5 1 mA V Gate to Source Cutoff Voltage -2 -0.5 V GS(off) G Forward Transconductance 4500 3000 S FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging J304 J305 Through-Hole TO-92 Bulk SMPJ304 SMPJ305 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPJ304TR SMPJ305TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel J304COT J305COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack J304CFT J305CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35033.R00Product Technical OrOrdderer Folder Support NowNow InterFET J304-5 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -30 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 3.27 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) J304 J305 Parameters Conditions Min Typ Max Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -30 -30 V Breakdown Voltage Gate to Source IGSS VGS = -20V, VDS = 0V -100 -100 pA Reverse Current Gate to Source VGS(OFF) VDS = 15V, ID = 1nA -2 -6 -0.5 -3 V Cutoff Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 5 15 1 8 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) J304 J305 Parameters Conditions Min Typ Max Min Typ Max Unit 4500 7500 3000 VDS = 15V, VGS = 0V, f = 1kHz Forward G V = 15V, V = 0V, f = 100MHz 3000 S FS DS GS Transconductance V = 15V, V = 0V, f = 400MHz DS GS 4200 V = 15V, V = 0V, f = 1kHz 50 50 DS GS G Output Conductance V = 15V, V = 0V, f = 100MHz 60 60 S OS DS GS VDS = 15V, VGS = 0V, f = 400MHz 80 VDS = 15V, VGS = 0V, f = 100MHz 80 80 G Input Conductance S IS VDS = 15V, VGS = 0V, f = 400MHz 800 V = 15V, I = 5mA, f = 100MHz 20 DS D GPS Power Gain dB VDS = 15V, ID = 5mA, f = 400MHz 11 800 800 VDS = 15V, VGS = 0V, f = 100MHz B Output Susceptance S OS V = 15V, V = 0V, f = 400MHz DS GS 3600 V = 15V, V = 0V, f = 100MHz 2000 2000 DS GS B Input Susceptance S IS VDS = 15V, VGS = 0V, f = 400MHz 7500 Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 3 3 pF Reverse Transfer Crss VDS = 15V, VGS = 0V, f = 1MHz 0.85 0.85 pF Capacitance Coss Output Capacitance VDS = 15V, VGS = 0V, f = 1MHz 1 1 pF 1.7 VDS = 15V, ID = 5mA, f = 100MHz NF Noise Figure dB R = 1 f = 400MHz G 3.8 J304-5 2 of 4 InterFET Corporation Document Number: IF35033.R00 www.InterFET.com June, 2019