Product Technical OrOrdderer Folder Support NowNow InterFET P1086-7 P1086, P1087 P-Channel JFET Features SOT23 Top View InterFET P0099F Geometry Low Noise: 8 nV/Hz Typical Source 1 Low Rds(on): 75 Ohms Maximum (P1086) RoHS Compliant Gate 3 SMT, TH, and Bare Die Package options. Drain 2 Applications Choppers Analog Switches TO-92 Bottom View Description Gate 3 The 30V InterFET P1086 and P1087 JFETs are targeted for low noise switching and chopper Drain 2 applications. Source 1 Product Summary Parameters P1086 Min P1087 Min Unit BVGSS Gate to Source Breakdown Voltage 30 30 V IDSS Drain to Source Saturation Current -10 -5 mA V Gate to Source Cutoff Voltage 10 (max) 5 (max) V GS(off) Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging P1086 P1087 Through-Hole TO-92 Bulk SMPP1086 SMPP1087 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPP1086TR SMPP1087TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel P1086COT P1087COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack P1086CFT P1087CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35091.R00Product Technical OrOrdderer Folder Support NowNow InterFET P1086-7 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 30 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 3.27 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) P1086 P1087 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 1A 30 30 V Breakdown Voltage Gate to Source IGSS VGS = 15V, VDS = 0V 2 2 nA Reverse Current Gate to Source VGS(OFF) VDS = -15V, ID = -1A 10 5 V Cutoff Voltage Drain to Source V = 0V, V = -20V GS DS IDSS -10 -5 mA Saturation Current (Pulsed) V = -15V, DS TA = 25C -10 -10 nA I Drain Cutoff Current P1086: V = 12V D(OFF) GS TA = 85C -0.5 -0.5 A P1087: V = 7V GS V = -15V, I = 0A, T = 25C 2 2 nA DG S A IDGO Drain Reverse Current V = -15V, I = 0A, T = 85C 0.1 0.1 A DG S A Drain to Source P1086: V = 0V, I = -6mA -0.5 -0.5 GS D VDS(ON) V ON Voltage P1087: V = 0V, I = -3mA -0.5 -0.5 GS D Static Drain to Source RDS(ON) ID = -1mA, VGS = 0V 75 150 ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) P1086 P1087 Parameters Conditions Min Max Min Max Unit Drain to Source RDS(ON) ID = 0A, VGS = 0V, f = 1kHz 75 150 ON Resistance Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1kHz 45 45 pF Reverse Transfer P1086: V = 0V, V = 12V, f = 1MHz 10 10 DS GS Crss pF Capacitance P1087: VDS = 0V, VGS = 7V, f = 1MHz 10 10 td(ON) Turn ON Delay Time 15 15 ns VDD = -6V, VGS(ON) = 0V tr Rise Time P1086: VGS(OFF) = 12V, ID(ON) = -6mA, 20 20 ns RL = 910 P1087: V = 7V, I = -3mA, td(OFF) Turn OFF Delay Time GS(OFF) D(ON) 15 25 ns R = 1.8K L tf Fall Time 50 100 ns P1086-7 2 of 4 InterFET Corporation Document Number: IF35091.R00 www.InterFET.com June, 2019