Product Information

RURG3060

Product Image X-ON

Datasheet
Diode: rectifying; THT; 600V; 30A; Package: tube; TO247-2; Ifsm:325A

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7329 ea
Line Total: USD 5.7329

1 - Global Stock
Ships to you between
Tue. 13 Jun to Fri. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between
Tue. 13 Jun to Fri. 16 Jun

MOQ : 1
Multiples : 1

Stock Image

RURG3060
ON Semiconductor

1 : USD 5.9149
10 : USD 5.2835
30 : USD 4.9098
90 : USD 4.5296
510 : USD 4.3556
1200 : USD 4.2763

     
Manufacturer
ON Semiconductor
Product Category
Diodes - General Purpose, Power, Switching
Brand
On Semiconductor
Repetitive Reverse Voltage Vrrm Max
600 V
Forward Current Ifav
30 A
Diode Configuration
Single
Forward Voltage Vf Max
1.5 V
Reverse Recovery Time Trr Max
60 ns
Forward Surge Current Ifsm Max
325 A
Operating Temperature Max
175 C
Diode Case Style
TO - 247
No. Of Pins
2 Pin
Product Range
RURG3 Series
Svhc
Lead (27 - Jun - 2018)
Current Ifrm
70 A
Current Ifsm
325 A
Diode Type
Soft Recovery
Forward Voltage
1.5 V
Junction Temperature Tj Max
175 C
Operating Temperature Min
- 65 C
Operating Temperature Range
- 65 C To + 175 C
Reverse Recovery Time Trr Typ
55 ns
Termination Type
Through Hole
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Ultrafast Diode 30 A, 600 V RURG3060 Description The RURG3060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching www.onsemi.com applications. It is specially suited for use in switching power supplies and industrial application. Features Ultrafast Recovery t = 60 ns ( I = 30 A) rr F CATHODE Max Forward Voltage, V = 1.5 V ( T = 25C) F C (BOTTOM CATHODE SIDE METAL) 600 V Reverse Voltage and High Reliability ANODE Avalanche Energy Rated TO2472LD This Device is PbFree and is RoHS Compliant CASE 340CL Applications Switching Power Supplies SYMBOL Power Switching Circuits K General Purpose A MARKING DIAGRAM Y&Z&3&K RURG3060 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RURG3060 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: April, 2020 Rev. 3 RURG3060/DRURG3060 ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol Ratings Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 130C) I 30 A C F(AV) Repetitive Peak Surge Current (Square Wave, 20 kHz) I 70 A FRM Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) I 325 A FSM Maximum Power Dissipation P 125 W D Avalanche Energy (See Figures 7 and 8) E 20 mJ AVL Operating and Storage Temperature T , T 65 to 175 C STG J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping RURG3060 RURG3060 TO2472LD 450 / Tube ELECTRICAL SPECIFICATIONS (T = 25C, unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage V 1.5 V I = 30 A F F (Pulse Width = 300 s, Duty Cycle = 2%) I = 30 A, T = 150C 1.3 V F C Instantaneous Reverse Current I V = 600 V 250 A R R V = 600 V, T = 150C 1 mA R C Reverse Recovery Time (See Figure 6) t I = 1 A, dI /dt = 100 A/ s 55 ns rr F F Summation of t + t a b I = 30 A, dI /dt = 100 A/ s 60 ns F F Time to Reach Peak Reverse Current t I = 30 A, dI /dt = 100 A/ s 30 ns a F F (See Figure 6) Time from Peak I to Projected Zero t I = 30 A, dI /dt = 100 A/ s 20 ns RM b F F Crossing of I Based on a Straight Line RM from Peak I through 25% of I RM RM (See Figure 6) Thermal Resistance Junction to Case R 1.2 C/W JC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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