Product Technical OrOrdderer Folder Support NowNow InterFET U311 U311 N-Channel JFET Features TO-72 Bottom View InterFET N0072L Geometry Gate 3 Low Noise: 2 nV/Hz Typical Low Ciss: 4pF Typical Drain 2 4 Case RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Mixers SOT23 Top View Oscillators VHF/UHF Amplifiers Source 1 Description Gate 3 The -25V InterFET U311 JFET is targeted for higher gain VHF amplifiers, mixers, and oscillators. Gate Drain 2 leakages are typically less than 10pA at room temperatures. TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters U311 Min Unit BV Gate to Source Breakdown Voltage -25 V GSS I Drain to Source Saturation Current 20 mA DSS VGS(off) Gate to Source Cutoff Voltage -1 V GFS Forward Transconductance 10 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging U311 Through-Hole TO-72 Bulk PNU311 Through-Hole TO-92 Bulk SMPU311 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPU311TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel U311COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack U311CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35048.R00Product Technical OrOrdderer Folder Support NowNow InterFET U311 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) U311 Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -150 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -150 nA GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -6 V Cutoff Voltage Gate to Source VGS(F) VDS = 0V, IG = 1mA 1 V Forward Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 20 60 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) U311 Parameters Conditions Min Typ Max Unit Forward GFS VDS = 10V, ID = 10mA, f = 1kHz 10 17 mS Transconductance GOS Output Conductance VDS = 10V, ID = 10mA, f = 1kHz 250 S Drain Gate Cdg VDS = 10V, ID = 10mA, f = 1MHz 2.5 pF Capacitance Source Gate Cgs VDS = 10V, ID = 10mA, f = 1MHz 5 pF Capacitance U311 2 of 5 InterFET Corporation Document Number: IF35048.R00 www.InterFET.com June, 2019