Product Technical OrOrdderer Folder Support NowNow InterFET VCR4N VCR4N N-Channel Voltage Controlled Resistor JFET Features TO-18 Bottom View InterFET N0016H Geometry Gate/Case 3 Low Leakage: 10pA Typical Low Input Capacitance: 1.0 pF Typical Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Small Signal Attenuators SOT23 Top View Filters Amplifier Gain Control Source 1 Oscillator Amplitude Control Gate 3 Description Drain 2 The -15V InterFET VCR4N Voltage Controlled Resistor JFET are targeted for high input impedance applications. Gate leakages are less TO-92 Bottom View than 10pA at room temperatures. The resistance range of the VCR4N is 200 Ohms to 600 Ohms. The TO-18 package is hermetically sealed and Gate 3 suitable for military applications. Drain 2 Source 1 Product Summary Parameters VCR4N Min Unit BVGSS Gate to Source Breakdown Voltage -15 V V Gate to Source Cutoff Voltage -3.5 V GS(off) Drain to Source ON Resistance 200 rds(on) Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging VCR4N Through-Hole TO-72 Bulk PNVCR4N Through-Hole TO-92 Bulk SMPVCR4N Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPVCR4NTR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel VCR4NCOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack VCR4NCFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35040.R00Product Technical OrOrdderer Folder Support NowNow InterFET VCR4N Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -15 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) VCR4N Parameters Conditions Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -15 V Breakdown Voltage Gate to Source IGSS VGS = -15V, VDS = 0V -0.2 nA Reverse Current Gate to Source V V = 10V, I = -1A -3.5 -7 V GS(OFF) DS D Cutoff Voltage Dynamic Characteristics ( TA = 25C, Unless otherwise specified) VCR4N Parameters Conditions Min Max Unit Drain to Source ID = 0A, VGS = 0V, r 200 600 ds(on) ON Resistance f = 1kHz Drain Gate V = 10V, I = 0A, DG S Cdg 3 pF Capacitance f = 1MHz Source Gate VGS = 10V, ID = 0A, C 3 pF sg Capacitance f = 1MHz VCR4N 2 of 5 InterFET Corporation Document Number: IF35040.R00 www.InterFET.com December, 2018