H11AA1, H11AA2, H11AA3, H11AA4 H11AA1X, H11AA2X, H11AA3X, H11AA4X A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS Dimensions in mm 2.54 z z z UL recognised, File No. E91231 z z 1 6 7.0 6.0 25 X SPECIFICATION APPROVALS 34 z VDE 0884 in 3 available lead form : - 1.2 - STD - G form 7.62 7.62 - SMD approved to CECC 00802 6.62 4.0 3.0 13 DESCRIPTION 0.5 Max The H11AA series of optically coupled 3.0 isolators consist of two infrared light emitting 0.26 3.35 0.5 diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual ABSOLUTE MAXIMUM RATINGS in line plastic package. (25C unless otherwise specified) FEATURES Storage Temperature -55C to + 125C z Options :- Operating Temperature -30C to + 100C 10mm lead spread - add G after part no. Lead Soldering Temperature Surface mount - add SM after part no. (1/16 inch (1.6mm) from case for 10 secs) 260C Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kV ,7.5kV ) INPUT DIODE RMS PK z AC or polarity insensitive input z All electrical parameters 100% tested Forward Current 50mA z Custom electrical selections available Power Dissipation 70mW APPLICATIONS OUTPUT TRANSISTOR z Computer terminals z Industrial systems controllers Collector-emitter Voltage BV 35V CEO z Telephone sets, Telephone exchangers Collector-base Voltage BV 35V CBO z Signal transmission between systems of Emitter-collector Voltage BV 6V ECO different potentials and impedances Emitter-base Voltage BV 6V EBO Collector Current 50mA Power Dissipation 150mW OPTION G OPTION SM SURFACE MOUNT 7.62 POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 4.67mW/C above 25C) 0.6 1.25 0.1 0.26 0.75 10.46 10.16 9.86 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales isocom.co.uk ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Output Collector-emitter Breakdown (BV)35 V I = 0.1mA CEO C ( note 2 ) Collector-base Breakdown (BV)35 V I = 100A CBO C Emitter-base Breakdown (BV)6 V I = 100A EBO E Emitter-collector Breakdown (BV)6 V I = 10A ECO E Collector-emitter Dark Current (I ) 100 nA V = 20V CEO CE Coupled Current Transfer Ratio (CTR) (note 2 ) H11AA4 100 % 10mAI , 10V V F CE H11AA3 50 % 10mAI , 10V V F CE H11AA1 20 % 10mAI , 10V V F CE H11AA2 10 % 10mAI , 10V V F CE Collector-emitter Saturation VoltageV 0.4 V 10mAI , 0.5mAI CE(SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Rise Time, tr 4 SV = 2V, I = 2mA CE C Fall Time, tf 3 SR = 100 L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 26/11/08 DB92296