IS34MW01G084-BLI ISSI

IS34MW01G084/164 IS35MW01G084/164 1Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW01G084/164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Command/Address/Data Multiplexed I/O Interface - Memory Cell: 1bit/Memory Cell - Command Register Operation - Organization: 128Mb x8 /64Mb x16 - Automatic Page 0 Read at Power-Up - X8: Option - Memory Cell Array: (128M + 4M) x 8bit - Boot from NAND support - Data Register: (2K + 64) x 8bit - Automatic Memory Download - Page Size: (2K + 64) Byte - NOP: 4 cycles - Block Erase: (128K + 4K) Byte - Cache Program/Read Operation - X16: - Copy-Back Operation - Memory Cell Array: (64M + 2M) x 16bit - EDO mode - Data Register: (1K + 32) x 16bit - OTP operation - Page Size: (1K + 32) Word - Bad-Block-Protect - Block Erase: (64K + 2K) Word Advanced Security Protection Highest performance - Hardware Data Protection: - Read Performance: - Program/Erase Lockout during Power - Random Read: 25us (Max.) Transitions - Serial Access: 45ns (Max.) - Write Performance: - Program time: 300us - typical Industry Standard Pin-out & Packages - Block Erase time: 3ms typical - T =48-pin TSOP 1 (Call Factory) - B =63-ball VFBGA Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 A Standby Current - Temp Grades: - Industrial: -40C to +85C - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 4bit/512Byte X16 - 4bit/256Word - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A3 11/14/2019