IS34MW04G084-TLI ISSI

IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Command/Address/Data Multiplexed I/O Interface - Memory Cell: 1bit/Memory Cell - Command Register Operation - Organization: 512Mb x8 /256Mb x16 - Automatic Page 0 Read at Power-Up Option - X8: - Boot from NAND support - Memory Cell Array: (512M + 16M) x 8bit - Automatic Memory Download - Data Register: (2K + 64) x 8bit - NOP: 4 cycles - Page Size: (2K + 64) Byte - Cache Program Operation for High - Block Erase: (128K + 4K) Byte Performance Program - X16: - Cache Read Operation - - Memory Cell Array: (256M + 8M) x 16bit - Copy-Back Operation - - Data Register: (1K + 32) x 16bit - EDO mode - - Page Size: (1K + 32) Byte - OTP operation - - Block Erase: (64K + 2K) Byte - Two-Plane Operation - Bad-Block-Protect Highest performance - Read Performance Advanced Security Protection - Random Read: 25us (Max.) - Hardware Data Protection: - Serial Access: 45ns (Max.) - Program/Erase Lockout during Power - Write Performance Transitions - Program time: 300us - typical - Block Erase time: 3ms typical Industry Standard Pin-out & Packages - T =48-pin TSOP 1 Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply Note: - 15 mA Active Read Current 1. Call Factory - 10 A Standby Current - T emp Grades: - Industrial: -40C to +85C (1) - Extended: -40C to +105C - Automotive, A1: -40C to +85C (1) - Automotive, A2: -40C to +105C - Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 4bit/512Byte X16 - 4bit/256Word - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A2 06/15/2018