Product Information

IS42SM16320E-75BLI

IS42SM16320E-75BLI electronic component of ISSI

Datasheet
DRAM 512Mb 32Mx16 166MHz Mobile SDRAM
Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.0525 ea
Line Total: USD 13.05

798 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
442 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 13.0525
10 : USD 12.098
25 : USD 11.822
100 : USD 10.35
250 : USD 9.8325
348 : USD 9.7405
1044 : USD 9.407
2784 : USD 9.016
5220 : USD 8.832

Read More Specifications

     
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Additional Infomation About Product

IS42/45SM/RM/VM16320E 8M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16320E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features JEDEC standard 3.3V, 2.5V, 1.8V power supply All inputs and outputs referenced to the positive edge of the Auto refresh and self refresh system clock All pins are compatible with LVCMOS interface Data mask function by DQM 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, Internal 4 banks operation A1 grade) Burst Read Single Write operation Programmable Burst Length and Burst Type Special Function Support - 1, 2, 4, 8 or Full Page for Sequential Burst - PASR(Partial Array Self Refresh) - 4 or 8 for Interleave Burst - Auto TCSR(Temperature Compensated Self Refresh) Programmable CAS Latency : 2,3 clocks - Programmable Driver Strength Control Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge Copyright 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances 1 Rev. A July 2014 www.issi.com - DRAM issi.com IS42/45SM/RM/VM16320E Figure1: 54Ball FBGA Ball Assignment 1 2 3 4 5 6 7 8 9 A VSS DQ15 VSSQ VDDQ DQ0 VDD B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 C DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CLK CKE /CAS /RAS /WE G A12 A11 A9 BA0 BA1 /CS H A8 A7 A6 A0 A1 A10 J VSS A5 A4 A3 A2 VDD Top View 2 Rev. A July 2014 www.issi.com - DRAM issi.com

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

ISSI may also be referenced as

Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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