IS46LR32160B-6BLA1-TR ISSI

IS46LR32160B-6BLA1-TR electronic component of ISSI
IS46LR32160B-6BLA1-TR ISSI
IS46LR32160B-6BLA1-TR DRAM
IS46LR32160B-6BLA1-TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IS46LR32160B-6BLA1-TR DRAM across the USA, India, Europe, Australia, and various other global locations. IS46LR32160B-6BLA1-TR DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. IS46LR32160B-6BLA1-TR
Manufacturer: ISSI
Category: DRAM
Description: DRAM Automotive (-40 to +85C), 512M, 1.8V, Mobile DDR, 16Mx32, 90 ball BGA (8mmx13mm) RoHS, T&R
Datasheet: IS46LR32160B-6BLA1-TR Datasheet (PDF)
Price (USD)
2500: USD 14.4072 ea
Line Total: USD 36018 
Availability - 0
  
QtyUnit Price
2500$ 14.4072

Availability 0
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 14.4072

   
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We are delighted to provide the IS46LR32160B-6BLA1-TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS46LR32160B-6BLA1-TR and other electronic components in the DRAM category and beyond.

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IS43LR16320B, IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features JEDEC standard 1.8V power supply. 64ms refresh period (8K cycle) VDD = 1.8V, VDDQ = 1.8V Auto & self refresh Four internal banks for concurrent operation Concurrent Auto Precharge MRS cycle with address key programs Maximum clock frequency up to 166MHZ - CAS latency 2, 3 (clock) Maximum data rate up to 333Mbps/pin - Burst length (2, 4, 8, 16) Power Saving support - Burst type (sequential & interleave) - PASR (Partial Array Self Refresh) Fully differential clock inputs (CK, /CK) - Auto TCSR (Temperature Compensated Self Refresh) All inputs except data & DM are sampled at the rising - Deep Power Down Mode edge of the system clock - Programmable Driver Strength Control by Full Strength Data I/O transaction on both edges of data strobe or 1/2, 1/4, 1/8 of Full Strength Bidirectional data strobe per byte of data (DQS) LVCMOS compatible inputs/outputs DM for write masking only 60-Ball FBGA package Edge aligned data & data strobe output Center aligned data & data strobe input Copyright 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. 11 Rev. A Apr. 2012 www.issi.com - dram issi.com IS43LR16320B, IS46LR16320B Figure1: 60Ball FBGA Ball Assignment 1 2 3 4 5 6 7 8 9 A VSS DQ15 VSSQ VDDQ DQ0 VDD B VDDQ DQ13 DQ14 DQ1 DQ2 VSSQ C VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ D VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ E VSSQ UDQS DQ8 DQ7 LDQS VDDQ F VSS UDM NC NC LDM VDD G CKE CK /CK /WE /CAS /RAS H A9 A11 A12 /CS BA0 BA1 J A6 A7 A8 A10 A0 A1 K VSS A4 A5 A2 A3 VDD Top View 2 Rev. A Apr. 2012 www.issi.com - dram issi.com

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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