Product Information


IS61WV51216BLL-10MLI electronic component of ISSI

SRAM 8M (512Kx16) 10ns Async SRAM 3.3v

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 16.9202 ea
Line Total: USD 16.9202

820 - Global Stock
Ships to you between
Tue. 17 Oct to Thu. 19 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 1
Multiples : 1
1 : USD 16.1457
10 : USD 14.5117
25 : USD 13.7565
40 : USD 13.6996
210 : USD 13.4256
420 : USD 13.4256
630 : USD 13.4256

203 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 210
Multiples : 210
210 : USD 14.2835

8 - Global Stock

Ships to you between
Wed. 18 Oct to Mon. 23 Oct

MOQ : 1
Multiples : 1
1 : USD 26.4257
10 : USD 25.2982
30 : USD 23.3437
100 : USD 21.6407

694 - Global Stock

Ships to you between Tue. 17 Oct to Thu. 19 Oct

MOQ : 1
Multiples : 1
1 : USD 16.9202
10 : USD 15.9399
25 : USD 14.8956
100 : USD 13.42
210 : USD 12.839
420 : USD 12.839
5040 : USD 12.839

1 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 1
Multiples : 1
1 : USD 16.1457
10 : USD 14.5117
25 : USD 13.7565
40 : USD 13.6996
210 : USD 13.4256

106 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 110
Multiples : 110
110 : USD 27.7543

Product Category
Memory Size
8 mb it
512 K X 16
Access Time
10 ns
Interface Type
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.4 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
Package / Case
M in I - BGA
Supply Current - Max
95 mA
Maximum Operating Current
95 mA
Factory Pack Quantity :
Data Rate
Memory Type
Number Of Ports
Hts Code
Product Type
Memory & Data Storage
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IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS OCTOBER 2009 CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL High-speed access times: are high-speed, 8M-bit static RAMs organized as 512K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI s high-perform- High-performance, low-power CMOS process ance CMOS technology. This highly reliable process coupled Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfor- noise immunity mance and low power consumption devices. Easy memory expansion with CE and OE op- tions When CE is HIGH (deselected), the device assumes a CE power-down standby mode at which the power dissipation can be reduced down with CMOS input levels. Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable TTL compatible inputs and outputs and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of the VDD 1.65V to 2.2V (IS61WV51216ALL) memory. A data byte allows Upper Byte (UB) and Lower speed = 20ns for VDD 1.65V to 2.2V Byte (LB) access. VDD 2.4V to 3.6V (IS61/64WV51216BLL) The device is packaged in the JEDEC standard 44-pin speed = 10ns for VDD 2.4V to 3.6V TSOP Type II and 48-pin Mini BGA (9mm x 11mm). speed = 8ns for VDD 3.3V + 5% Packages available: 48-ball miniBGA (9mm x 11mm) 44-pin TSOP (Type II) Industrial and Automotive Temperature Support Lead-free available Data control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM 512K x 16 A0-A18 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. 1 Rev. F 10/01/09IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 48-pin mini BGA (9mmx11mm) 1 2 3 4 5 6 A LB OE A0 A1 A2 NC I/O UB A3 A4 CE I/O B 8 0 I/O I/O A5 A6 I/O I/O 9 10 1 2 C GND A7 I/O A17 I/O VDD D 11 3 I/O GND VDD I/O12 NC A16 4 E I/O A14 I/O 14 I/O A15 5 I/O F 13 6 I/O NC A12 A13 WE I/O G 15 7 A18 A8 A9 A10 A11 NC H PIN DESCRIPTIONS A0-A18 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) NC No Connection VDD Power GND Ground 2 Integrated Silicon Solution, Inc. Rev. F 10/01/09

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc