Product Information

IS61WV5128EDBLL-10BLI

IS61WV5128EDBLL-10BLI electronic component of ISSI

Datasheet
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin Mini-BGA

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7113 ea
Line Total: USD 3.71

90 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
90 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 1
Multiples : 1
1 : USD 3.7113
10 : USD 3.5381
30 : USD 3.4315
100 : USD 3.2678

1794 - Global Stock


Ships to you between Wed. 01 May to Fri. 03 May

MOQ : 1
Multiples : 1
1 : USD 4.7725
10 : USD 4.393
100 : USD 3.933
250 : USD 3.9215
480 : USD 3.772
960 : USD 3.6455
2880 : USD 3.4615
5280 : USD 3.3695
10080 : USD 3.3695

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
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Supply Voltage - Max
Supply Voltage - Min
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IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS NOVEMBER 2011 CMOS STATIC RAM WITH ECC DESCRIPTION FEATURES The I S S I IS61/64WV5128EDBLL is a high-speed, High-speed access time: 8, 10 ns 4,194,304-bit static RAMs organized as 524,288 words by Low Active Power: 85 mW (typical) 8 bits. It is fabricated using ISSI s high-performance CMOS Low Standby Power: 7 mW (typical) technology. This highly reliable process coupled with inno- CMOS standby vative circuit design techniques, yields high-performance and low power consumption devices. Single power supply Vdd 2.4V to 3.6V (10 ns) When CE is HIGH (deselected), the device assumes a Vdd 3.3V 10% (8 ns) standby mode at which the power dissipation can be re- Fully static operation: no clock or refresh duced down with CMOS input levels. required Easy memory expansion is provided by using Chip Enable Three state outputs and Output Enable inputs, CE and OE. The active LOW Industrial and Automotive temperature support Write Enable (WE) controls both writing and reading of the memory. Lead-free available Error Detection and Error Correction The IS61/64WV5128EDBLL is packaged in the JEDEC standard 44-pin TSOP-II, 36-pin SOJ and 36-pin Mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM ECC Array Memory Array A0-A18 Decoder (512Kx4) (512Kx8) 8 4 8 8 12 I/O Data IO0-7 ECC Column I/O Circuit /CE Control /OE Circuit /WE Copyright 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B 11/08/2011IS61/64WV5128EDBLL PIN CONFIGURATION (HIGH SPEED) (61/64WV5128ALL/BLL) 36 mini BGA 44-Pin TSOP (Type II) 1 2 3 4 5 6 NC 1 44 NC NC 2 43 NC A0 3 42 NC A1 4 41 A18 A2 5 40 A17 A3 6 39 A16 A A0 A1 NC A3 A6 A8 A4 7 38 A15 B I/O4 A2 WE A4 A7 I/O0 CE 8 37 OE I/O0 9 36 I/O7 C I/O5 NC A5 I/O1 I/O1 10 35 I/O6 GND VDD VDD 11 34 GND D GND 12 33 VDD VDD GND E I/O2 13 32 I/O5 F I/O6 A18 A17 I/O2 I/O3 14 31 I/O4 WE 15 30 A14 I/O7 OE CE A16 A15 I/O3 G A5 16 29 A13 A9 A10 A12 A13 A14 17 28 A11 A6 A12 H A7 18 27 A11 26 A8 19 A10 A9 20 25 NC 24 NC 21 NC NC 22 23 NC 36-Pin SOJ PIN DESCRIPTIONS A0 1 36 NC A0-A18 Address Inputs A1 2 35 A18 CE Chip Enable Input A2 3 34 A17 OE Output Enable Input A3 4 33 A16 WE Write Enable Input A4 5 32 A15 CE 6 31 OE I/O0-I/O7 Bidirectional Ports I/O0 7 30 I/O7 Vdd Power I/O1 8 29 I/O6 GND Ground VDD 9 28 GND NC No Connection 27 GND 10 VDD I/O2 11 26 I/O5 I/O3 12 25 I/O4 WE 13 24 A14 A5 14 23 A13 A6 15 22 A12 A7 16 21 A11 A8 17 20 A10 A9 18 19 NC 2 Integrated Silicon Solution, Inc. www.issi.com Rev. B 11/08/2011

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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