Product Information

IS64WV102416BLL-10MLA3

IS64WV102416BLL-10MLA3 electronic component of ISSI

Datasheet
ISSI SRAM 16M (1Mx16) 10ns Async SRAM

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 35.811 ea
Line Total: USD 35.811

957 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
957 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 35.811
10 : USD 33.672
25 : USD 32.5105
50 : USD 31.487
100 : USD 27.8875
210 : USD 27.0825
1050 : USD 26.9905
2520 : USD 26.542

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
Access Time
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Supply Current - Max
Data Rate
Series
Type
Brand
Factory Pack Quantity :
Number Of Ports
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS JUNE 2014 CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI s high-perfor- High-perfor mance, low-power CMOS process mance CMOS technology. This highly reliable process Multiple center power and ground pins for greater coupled with innovative circuit design techniques, yields noise immunity high-performance and low power consumption devices. Easy memor y expansion with CE and OE op- tions When CE is HIGH (deselected), the device assumes a CE power-down standby mode at which the power dissipation can be re- Fully static operation: no clock or refresh duced down with CMOS input levels. required TTL compatible inputs and outputs Easy memor y expansion is provided by using Chip Enable Single power supply and Output Enable inputs, CE and OE. The active LOW Vdd 1.65V to 2.2V (IS61WV102416ALL) Wr ite Enable (WE) controls both writing and reading of the speed = 20ns for Vdd 1.65V to 2.2V memory. A data byte allows Upper Byte (UB) and Lower Vdd 2.4V to 3.6V (IS61/64WV102416BLL) Byte (LB) access. speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5% The device is packaged in the JEDEC standard 48-pin Packages available: TSOP Type I and 48-pin Mini BGA (9mm x 11mm). 48-ball miniBGA (9mm x 11mm) 48-pin TSOP (Type I) Industr ial and Automotive Temperature Suppor t Lead-free available Data control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM 1024K x 16 A0-A19 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. G 06/02/2014IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 48-pin mini BGA (9mmx11mm) 1 2 3 4 5 6 A LB OE A0 A1 A2 NC I/O UB A3 A4 CE I/O B 8 0 I/O I/O A5 A6 I/O I/O C 9 10 1 2 GND A7 I/O11 A17 I/O3 VDD D VDD I/O NC A16 I/O GND 12 4 E I/O A14 I/O 14 I/O A15 5 I/O F 13 6 I/O A19 A12 A13 WE I/O G 15 7 A18 A8 A9 A10 A11 NC H PIN DESCRIPTIONS A0-A19 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Wr ite Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) NC No Connection Vdd Power GND Ground 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. G 06/02/2014

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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