DAA200X1800NA V = 1800 V RRM Avalanche Rectifier I = 2x 100 A FAV V = 1.21 V F Parallel legs Part number DAA200X1800NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Avalanche rated Diode for main rectification Isolation Voltage: V~ 3000 Planar passivated chips For single and three phase Industry standard outline Very low leakage current bridge configurations RoHS compliant Very low forward voltage drop Epoxy meets UL 94V-0 Improved thermal behaviour Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b 2019 IXYS all rights reservedDAA200X1800NA Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 8 0 0 V T = 25C 200 A R VJ R V = 1 8 0 0 V T = 1 5 0 C 2 mA R VJ forward voltage drop V I = 1 0 0 A T = 25C 1.24 V F F VJ I = 2 0 0 A 1.55 V F T = C 1.21 V I = 1 0 0 A 125 F VJ I = 2 0 0 A 1.61 V F average forward current T = 1 0 0 C T = 1 5 0 C 100 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 4 m F thermal resistance junction to case 0.3 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 415 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.50 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.62 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 1.28 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.38 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 11.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 10.9 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 8.13 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.87 kAs R V = 4 0 0 V f = 1 MHz T = 25C 53 pF C junction capacitance J R VJ P max. surge reverse dissipation t = 10 s T = 1 5 0 C 20 kW RSM p VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b 2019 IXYS all rights reserved