DMA50P1600HB V = 2x1600 V RRM Standard Rectifier I = 50 A FAV V = 1.26 V F Phase leg Part number DMA50P1600HB Backside: anode/cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Diode for main rectification Industry standard outline Very low leakage current For single and three phase RoHS compliant Very low forward voltage drop bridge configurations Epoxy meets UL 94V-0 Improved thermal behaviour High commutation robustness High surge capability Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c 2019 IXYS all rights reservedDMA50P1600HB Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1600 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 6 0 0 V T = 25C 40 A R VJ R V = 1 6 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 5 0 A T = 25C 1.30 V F F VJ I = 1 0 0 A 1.61 V F T = C 1.26 V I = 5 0 A 150 F VJ I = 1 0 0 A 1.66 V F average forward current T = 1 3 0 C T = 1 7 5 C 50 A I FAV C VJ 180 sine V T = 1 7 5 C 0.81 V threshold voltage F0 VJ for power loss calculation only slope resistance r 8.6 m F thermal resistance junction to case 0.45 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 330 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 650 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 700 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 555 VJ t = 8,3 ms (60 Hz), sine V = 0 V 595 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 2.12 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.04 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 1.54 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.48 kAs R V = 4 0 0 V f = 1 MHz T = 25C 19 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c 2019 IXYS all rights reserved