DMA90U1800LB 3~ Standard Rectifier Rectifier V = 1800 V RRM I 90 A = DAV A I = 350 FSM ISOPLUS Surface Mount Power Device 3~ Rectifier Bridge Part number DMA90U1800LB Marking on Product: DMA90U1800LB Backside: isolated 4/5/6 7 8 9 1/2/3 Features / Advantages: Applications: Package: SMPD Rectifier diode Line rectifying 50/60 Hz Isolation Voltage: V~ 3000 Isolated back surface Drives Industry convenient outline Low coupling capacity between pins and heatsink SMPS RoHS compliant Enlarged creepage towards heatsink UPS Epoxy meets UL 94V-0 Application friendly pinout Soldering pins for PCB mounting Low inductive current path Backside: DCB ceramic High reliability Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a 2019 IXYS all rights reservedDMA90U1800LB Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 8 0 0 V T = 25C 40 A R VJ R V = 1 8 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 3 0 A T = 25C 1.26 V F F VJ I = 9 0 A 1.79 V F T = C 1.20 V I = 3 0 A 150 F VJ I = 9 0 A 1.93 V F bridge output current T = 1 1 0 C T = 1 7 5 C 90 A I DAV C VJ rectangular d = V T = 1 7 5 C 0.81 V threshold voltage F0 VJ for power loss calculation only slope resistance r 12.7 m F thermal resistance junction to case 1.1 K/W R thJC thermal resistance case to heatsink 0.4 K/W R thCH P total power dissipation T = 25C 135 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 350 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 380 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 300 VJ t = 8,3 ms (60 Hz), sine V = 0 V 320 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 615 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 600 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 450 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 425 As R V = 4 0 0 V f = 1 MHz T = 25C 11 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a 2019 IXYS all rights reserved