DSEI2X101-06P IXYS

DSEI 2x101 I = 2x96 A Fast Recovery FAVM V = 600 V RRM Epitaxial Diode (FRED) t = 35 ns rr AC-1 IK-10 V V Type RSM RRM V V 600 600 DSEI 2x 101-06P LN-9 VX-18 D5 Symbol Conditions Maximum Ratings (per diode) Features 2 independent FRED in 1 package I T = T 150 A FRMS VJ VJM Isolation voltage 3000 V~ I T = 70C rectangular d = 0.5 96 A FAVM C Planar passivated chips I t < 10 s rep. rating pulse width limited by T tbd A FRM P VJM Leads suitable for PC board soldering I T = 45C t = 10 ms (50 Hz), sine 1200 A FSM VJ Very short recovery time Soft recovery behaviour T -40...+150 C VJ T 150 C VJM Applications T -40...+150 C stg Antiparallel diode for high frequency P T = 25C 250 W tot C switching devices Anti saturation diode V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL Snubber diode I 1 mA t = 1 s 3000 V~ ISOL Free wheeling diode in converters M Mounting torque (M4) 1.5 - 2.0 Nm d and motor control circuits 14 - 18 lb.in. Rectifiers in switch mode power supplies (SMPS) Weight 24 g Inductive heating and melting Uninterruptible power supplies (UPS) Symbol Conditions Characteristic Values (per diode) Ultrasonic cleaners and welders typ. max. Advantages I T = 25CV = V 3mA R VJ R RRM T = 25CV = 0.8 V 1mA VJ R RRM Easy to mount with two screws T = 125CV = 0.8 V 20 mA VJ R RRM Space and weight savings Improved temperature and power V I = 100 A T = 150C 1.17 V F F VJ T = 25C 1.25 V cycling capability VJ Low noise switching V For power-loss calculations only 0.7 V T0 Small and light weight r T = T 4.7 m T VJ VJM R 0.5 K/W thJC R 0.05 K/W thCK t I = 1 A -di/dt = 400 A/s 40 60 ns rr F V = 30 V T = 25C R VJ I V = 100 V I = 80 A -di /dt = 200 A/s 19 24 A RM R F F L 0.05 H T = 100C VJ d Creeping distance on surface min. 11.2 mm S d Creeping distance in air min. 11.2 mm A a Allowable acceleration max. 50 m/s I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 2001 IXYS All rights reserved 1 - 2 139DSEI 2x 101-06P 150 7 80 T = 100C T = 100C A VJ VJ C A V = 300V V = 300V R R 70 6 125 I Q RM 60 r I 5 F 100 I =200A F 50 I =100A 4 I =200A F F I = 50A I =100A 75 F 40 F I = 50A T =150C 3 F VJ 30 50 2 T =100C VJ 20 25 1 10 T =25C VJ 0 0 0 D5 V A/s 0.0 0.5 1.0 1.5 100 A/s 1000 0 200 400 600 800 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 1.4 260 60 3.0 T = 100C T = 100C VJ VJ ns V s I = 100A V = 300V F R 240 50 2.5 1.2 V t FR rr t fr 220 K f 40 2.0 t 1.0 fr V FR 200 30 1.5 I =200A Q F r I 180 I =100A RM F 0.8 I = 50A F 20 1.0 160 0.6 10 0.5 140 0.4 120 0 0.0 0 50 100 C 150 0 200 400 600 800 1000 0 200 400 600 800 1000A/s A/s -di /dt di /dt T F F VJ Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 1 Dimensions in mm (1mm = 0.0394) K/W D=0.7 0.5 Z thJC 0.3 0.2 0.1 0.1 0.05 Single Pulse DSEI 2x101-06 0.05 0.001 0.01 0.1 1 10 s t Fig. 7 Transient thermal impedance junction to case at various duty cycles 2001 IXYS All rights reserved 2 - 2