DSEP15-12CR IXYS

DSEP15-12CR V = 1200 V RRM HiPerDynFRED I = 15 A FAV t = 15 ns rr High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode Part number DSEP15-12CR Backside: isolated 1 3 Features / Advantages: Applications: Package: ISOPLUS247 Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3600 Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Soldering pins for PCB mounting Very soft recovery behaviour Rectifiers in switch mode power Backside: DCB ceramic Soft reverse recovery for low EMI/RFI supplies (SMPS) Reduced weight Low Irm reduces: Uninterruptible power supplies (UPS) Advanced power cycling - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c 2020 IXYS all rights reservedDSEP15-12CR Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 100 A R R VJ V = 1 2 0 0 V T = 1 5 0 C 0.5 mA R VJ forward voltage drop V I = 1 5 A T = 25C 4.04 V F F VJ I = 3 0 A 4.45 V F T = C 2.67 V I = 1 5 A 150 F VJ I = 3 0 A 3.10 V F average forward current T = 1 3 5 C T = 1 7 5 C 15 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 1.82 V threshold voltage F0 VJ for power loss calculation only slope resistance r 29.8 m F thermal resistance junction to case 1 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 150 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 110 A I R FSM VJ junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 9 pF C J R VJ I max. reverse recovery current T = 25 C 10 A RM VJ I = 15 A V = 800 V T = 125C 15 A F R VJ reverse recovery time -di /dt = 600A/s T = 25 C 15 ns t rr F VJ T = 125C 110 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c 2020 IXYS all rights reserved