DSEP2X61-12A

DSEP2x61-12A V = 1200 V RRM HiPerFRED I = 2x 60 A FAV t = 40 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x61-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Base plate: Copper Very soft recovery behaviour Rectifiers in switch mode power internally DCB isolated Avalanche voltage rated for reliable operation supplies (SMPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d 2018 IXYS all rights reservedDSEP2x61-12A Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 2 0 0 V T = 25C 1 mA R R VJ V = 1 2 0 0 V T = 1 5 0 C 4 mA R VJ forward voltage drop V I = 6 0 A T = 25C 2.42 V F F VJ I = 1 2 0 A 2.84 V F T = C 1.52 V I = 6 0 A 150 F VJ I = 1 2 0 A 1.92 V F average forward current T = 8 0 C T = 1 5 0 C 60 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.15 V threshold voltage F0 VJ for power loss calculation only slope resistance r 6.2 m F thermal resistance junction to case 0.6 K/W R thJC thermal resistance case to heatsink K/W R 0.10 thCH P total power dissipation T = 25C 200 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 800 A I R FSM VJ junction capacitance V = 6 0 0 V f = 1 MHz T = 25C 48 pF C J R VJ I max. reverse recovery current T = 25 C 13 A RM VJ I = 60 A V = 600 V T = 100C 20 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 85 ns t rr F VJ T = 100C 250 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d 2018 IXYS all rights reserved