DS 17 DSI 17 DSA 17 DSAI 17 V = 800-1800 V Rectifier Diode RRM I = 40 A F(RMS) Avalanche Diode I = 25 A F(AV)M DO-203 AA V V V Anode Cathode RSM (BR)min RRM V V V on stud on stud C A DS DSI DSA DSAI 900 - 800 DS 17-08A DSI 17-08A A C 1300 - 1200 DS 17-12A DSI 17-12A 1300 1300 1200 DSA 17-12A DSAI 17-12A 1700 1750 1600 DSA 17-16A DSAI 17-16A 1900 1950 1800 DSA 17-18A DSAI 17-18A 10-32UNF Only for Avalanche Diodes A = Anode C = Cathode Symbol Test Conditions Maximum Ratings I T = T 40 A F(RMS) VJ VJM I T = 125 C 180 sine 25 A Features F(AV)M case International standard package, P DSA(I) types, T = T , t = 10 s7kW RSM VJ VJM p JEDEC DO-203 AA (DO-4) Planar glassivated chips I T = 45 C t = 10 ms (50 Hz), sine 370 A FSM VJ V = 0 t = 8.3 ms (60 Hz), sine 400 A R Applications T = T t = 10 ms (50 Hz), sine 300 A VJ VJM Supplies for DC power equipment V = 0 t = 8.3 ms (60 Hz), sine 320 A R DC supply for PWM inverter 2 2 Field supply for DC motors I t T = 45 C t = 10 ms (50 Hz), sine 680 A s VJ 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 660 A s R 2 T = T t = 10 ms (50 Hz), sine 450 A s VJ VJM Advantages 2 V = 0 t = 8.3 ms (60 Hz), sine 430 A s R Space and weight savings T -40...+180 C Simple mounting VJ T 180 C Improved temperature and power VJM T -40...+180 C cycling stg Reduced protection circuits M Mounting torque 2.2-2.8 Nm d 19-25 lb.in. Weight 6g Dimensions in mm (1 mm = 0.0394 ) Symbol Test Conditions Characteristic Values I T = T V = V 4mA R VJ VJM R RRM V I = 55 A T = 25 C 1.36 V F F VJ V For power-loss calculations only 0.85 V T0 r T = T 8m T VJ VJM R DC current 1.5 K/W thJC R DC current 2.1 K/W thJH d Creepage distance on surface 2.05 mm S d Strike distance through air 2.05 mm A 2 a Max. allowable acceleration 100 m/s Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 1 - 2 2000 IXYS All rights reservedDS 17 DSI 17 DSA 17 DSAI 17 100 400 1000 typ. lim. 50Hz, 80% V V = 0 V R RRM 2 800 A A A s 80 600 300 T = 45C VJ 2 I t I I F FSM T = 45C VJ T = 180C VJ 60 400 T = 25C VJ 200 T = 180C T = 180C VJ VJ 40 200 100 20 0 0 100 -3 -2 -1 0 0.20.4 0.60.8 1.01.2 1.41V.6 1.8 10 10 10 s 101123 4567 ms890 V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : crest value, t: duration FSM 50 40 R : thJA W A 2.8 K/W 40 3.2 K/W 30 P I F F(AV)M 4,8 K/W 6.3 K/W 30 8.5 K/W 20 Cu 80x80 20 DC 180 sin 120 10 60 10 30 0 0 0 102030 40 A 5000 50 100 150 C 200 0 50 100 150 C I T T amb case F(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180 sine R for various conduction angles d: thJH K/W dR (K/W) thJH DC 2.10 2 Z 180 2.23 thJH 120 2.33 60 2.53 30 2.72 Constants for Z calculation: 1 thJH iR (K/W) t (s) thi i 1 0.1006 0.0021 2 0.5311 0.0881 3 0.8683 2.968 0 -3 -2 -1 0 1 2 4 0.600 3.20 10 10 10 10 10 s 10 t Fig. 6 Transient thermal impedance junction to heatsink 2 - 2 2000 IXYS All rights reserved