DSS6-015AS IXYS

DSS 6-015AS I = 6 A Power Schottky Rectifier FAV V = 150 V RRM V = 0.62 V F TO-252 AA V V Type marking AC RSM RRM V V on product A C (TAB) 150 150 DSS 6-015AS 6Y150AS A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 20 A FRMS Very low V I T = 160C rectangular, d = 0.5 6 A F FAV C Extremely low switching losses I T = 45C t = 10 ms (50 Hz), sine 80 A FSM VJ p Low I -values RM Epoxy meets UL 94V-0 E I = 1 A L = 100 H T = 25C non repetitive 0.05 mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive 0.1 A AR A RRM Rectifiers in switch mode power (dv/dt) 18 kV/s cr supplies (SMPS) T -55...+175 C Free wheeling diode in low voltage VJ T 175 C converters VJM T -55...+150 C stg Advantages P T = 25C 50 W tot C High reliability circuit operation Weight typical 0.3 g Low voltage peaks for reduced protection circuits Low noise switching Symbol Conditions Characteristic Values Low losses typ. max. I T = 25C V = V 0.3 mA R VJ R RRM Dimensions see Outlines.pdf T = 125C V = V 2.5 mA VJ R RRM V I = 6 A T = 125C 0.62 V F F VJ I = 6 A T = 25C 0.78 V F VJ I = 12 A T = 125C 0.71 V F VJ R 3.0 K/W thJC Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 2 428DSS 6-015AS 100 100 1000 mA A pF T =175C VJ 10 I R C T 150C I F 1 125C T = 25C VJ 10 0.1 100C 100 75C 0.01 T = VJ 50C 175C 150C 0.001 25C 125C 25C 1 0.0001 10 0.0 0.2 0.4 0.6 0.8 V 1.0 V 0 30 60 90 120 V150 0 30 60 90 120 150 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 15 10000 25 W A P (AV) 20 A I I FSM F(AV) 10 DC d = 0.5 15 d = DC 1000 0.5 10 0.33 5 0.25 0.17 0.08 5 0 100 0 015105 A20 10 100 1000 s 10000 0 50 100 150 C 200 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 10 K/W D = 0.5 0.33 Z thJC 1 0.25 0.17 0.08 Single Pulse 0.1 DSS 6-015AS 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 2 - 2 428