DSSK50-015A IXYS

DSSK 50-015A I = 2x25 A Power Schottky Rectifier FAV V = 150 V RRM with common cathode V = 0.68 V F Preliminary Data AC A TO-247 AD V V Type RSM RRM V V A 150 150 DSSK 50-015A C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V I T = 150C rectangular, d = 0.5 25 A F FAV C Extremely low switching losses I T = 150C rectangular, d = 0.5 per device 50 A FAV C Low I -values RM I T = 45C t = 10 ms (50 Hz), sine 450 A FSM VJ p Epoxy meets UL 94V-0 E I = tbd A L = 180 H T = 25C non repetitive tbd mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive tbd A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) 18 kV/s cr Free wheeling diode in low voltage T -55...+175 C converters VJ T 175 C VJM T -55...+150 C Advantages stg High reliability circuit operation P T = 25C 135 W tot C Low voltage peaks for reduced M mounting torque M3 0.8...1.2 Nm d protection circuits Low noise switching Weight typical 6 g Low losses Symbol Conditions Characteristic Values Dimensions see Outlines.pdf typ. max. I T = 25CV = V 1.5 mA R VJ R RRM T = 125CV = V 10 mA VJ R RRM V I = 25 A T = 125C 0.68 V F F VJ I = 25 A T =25C 0.81 V F VJ I = 50 A T = 125C 0.81 V F VJ R 1.1 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2003 IXYS All rights reserved 1 - 2 228DSSK 50-015A 100 100 10000 mA A pF T =175C VJ 10 I R C T I 150C F 1 125C 10 0.1 100C 1000 75C 0.01 T = VJ D2 50C 175C 150C 0.001 25C 125C T = 25C VJ 25C 1 100 0.0001 80 V .0 0.2 0.4 0.6 0.8 1.0V 1.2 0 20 40 60 80 100 120 140 V 0 20 40 60 80 100 120 140 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 60 10000 80 W A 50 A DC P 60 (AV) I FSM 40 d = 0.5 I F(AV) d = 30 1000 40 DC 0.5 0.33 20 0.25 0.17 20 0.08 10 0 100 0 A 0 102043006500 10 100 1000 s 10000 0 50 100 150 C 200 T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 10 K/W 1 D = 0.5 Z 0.33 thJC 0.25 0.17 0.08 0.1 Single Pulse DSSK 50-015A 0.01 0.0001 0.001 0.01 0.1 1 s t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2003 IXYS All rights reserved 2 - 2 228