DSSK50-01A IXYS

DSSK 50-01A I = 2x25 A Power Schottky Rectifier FAV V = 100 V RRM with common cathode V = 0.65 V F TO-247 AD V V Type RSM RRM V V AC A A 100 100 DSSK 50-01A C C (TAB) A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings Features International standard package I 70 A FRMS Very low V F I T = 155 C rectangular, d = 0.5 25 A FAV C Extremely low switching losses I T = 155 C rectangular, d = 0.5 per device 50 A FAV C Low I -values RM Epoxy meets UL 94V-0 I T = 45C t = 10 ms (50 Hz), sine 450 A FSM VJ p E I = 11 A L = 180 H T = 25C non repetitive 13 mJ AS AS VJ Applications I V =1.5 V typ. f=10 kHz repetitive 1.1 A AR A RRM Rectifiers in switch mode power supplies (SMPS) (dv/dt) 5000 V/ s cr Free wheeling diode in low voltage T -55...+175 C VJ converters T 175 C VJM T -55...+150 C stg Advantages P T = 25 C 135 W tot C High reliability circuit operation Low voltage peaks for reduced M mounting torque 0.8...1.2 Nm d protection circuits Weight typical 6 g Low noise switching Low losses Symbol Conditions Characteristic Values Dimensions see outlines.pdf typ. max. I T = 25 CV = V 1mA R VJ R RRM T = 125 CV = V 10 mA VJ R RRM V I = 25 A T = 125 C 0.65 V F F VJ I = 25 A T =25 C 0.80 V F VJ I = 50 A T = 125 C 0.77 V F VJ R 1.1 K/W thJC R 0.25 K/W thCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 007DSSK 50-01A 100 10000 100 mA A pF T =175C 10 VJ I C R T I F 150C 1 125C 10 1000 100C T = VJ 0.1 175C 75C 150C 125C 25C 0.01 50C 25C T = 25C VJ 1 100 0.001 0.0 0.2 0.4 0.6 0.8 V 1.0 020 40 60 80 V100 0 2040 6080 V100 V V V R F R Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current I Fig. 3 Typ. junction capacitance C R T drop characteristics versus reverse voltage V versus reverse voltage V R R 80 60 10000 W A 50 A 60 P (AV) I d=0.5 DC FSM I 40 F(AV) d = 40 30 1000 DC 0.5 0.33 20 0.25 20 0.17 10 0.08 0 0 100 040 80 120 160C 0 102043006500 10 100 1000 10000 A s T I t C F(AV) P Fig. 4 Average forward current I Fig. 5 Forward power loss F(AV) versus case temperature T characteristics C 1 D=0.5 K/W 0.33 Z 0.25 thJC 0.17 0.08 0.1 Single Pulse (Thermal Resistance) DSSK 50-01A 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 2000 IXYS All rights reserved 2 - 2 007