FII 40-06D I = 40 A C25 IGBT phaseleg V = 600 V CES in ISOPLUS i4-PAC V = 1.8 V CE(sat) typ. 3 5 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage V T = 25C to 150C 600 V CES VJ - positive temperature coefficient for easy paralleling V 20 V GES - fast switching I T = 25C 40 A C25 C HiPerFRED diode I T = 90C 25 A C90 C - optimized fast and soft reverse recovery I V = 15 V R = 33 T = 125C 60 A CM GE G VJ - low operating forward voltage V RBSOA Clamped inductive load L = 100 H V CEK CES - low leakage current t V = V V = 15 V R = 33 10 s SC CE CES GE G ISOPLUS i4-PAC package (SCSOA) T = 125C non-repetitive VJ - isolated back surface P T = 25C 125 W tot C - low coupling capacity between pins and heatsink Symbol Conditions Characteristic Values - enlarged creepage towards heatsink - application friendly pinout (T = 25C, unless otherwise specified) VJ - low inductive current path min. typ. max. - high reliability V I = 25 A V = 15 V T = 25C 1.8 2.2 V CE(sat) C GE VJ - industry standard outline T = 125C 2.0 V VJ - UL registered E 72873 V I = 0.7 mA V = V 4.5 6.5 V GE(th) C GE CE Applications I V = V V = 0 V T = 25C 0.6 mA CES CE CES GE VJ single phaseleg T = 125C 0.6 mA VJ - buck-boost chopper I V = 0 V V = 20 V 200 nA GES CE GE H bridge t 50 ns - power supplies d(on) t 50 ns - induction heating r Inductive load T = 125C VJ t 270 ns - four quadrant DC drives d(off) V = 300 V I = 25 A CE C t 40 ns - controlled rectifier f V = 15 V R = 33 GE G E 1.2 mJ three phase bridge on E 0.8 mJ - AC drives off - controlled rectifier C V = 25 V V = 0 V f = 1 MHz 1.6 nF ies CE GE Q V = 300 V V = 15 V I = 30 A 95 nC Gon CE GE C R 1 K/W thJC R with heatsink compound 2 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 1 - 4 PHASE-OUTFII 40-06D Diode Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 30 A F25 C I T = 90C 15 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 25 A T = 25C 2.5 2.8 V F F VJ T = 125C 1.7 V VJ I I = 15 A di /dt = -400 A/s 7 A RM F F t V = 300 V V = 0 V T = 125C 50 ns rr R GE VJ R (per diode) 2.3 K/W thJC R with heatsink compound 4.6 K/W thJH Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz t = 1 s 2500 V~ ISOL ISOL F Mounting force with clip 20...120 Nm C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted P 40 pF pins and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight 6 g MI L L I MET ER I NCHES DI M. MI N MAX MI N MAX A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A A2 1.17 2.16 0.046 0.085 A2 E E1 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 C 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e 3.81 BSC 0.15 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 4x e R 4.57 0.100 0.180 C b2 2.54 1 2 3 4 5 W 0.10 0.004 A1 Die konvexe Form des Substrates ist typ. < 0.05 mm ber b der Kunststoffoberflche der Bauteilunterseite b4 The convex bow of substrate is typ. < 0.05 mm over plastic W surface level ofdevice bottom side IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 2 - 4 PHASE-OUT L D R L1 Q D1 D2