FUO22-12N 3~ Standard Rectifier Rectifier V = 1200 V RRM I 30 A = DAV A I = 150 FSM 3~ Rectifier Bridge Part number FUO22-12N Backside: isolated 2 5 4 3 1 Features / Advantages: Applications: Package: i4-Pac Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 3000 Improved temperature and power cycling For single and three phase Industry convenient outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Epoxy meets UL 94V-0 Very low leakage current Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c 2019 IXYS all rights reservedFUO22-12N Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 10 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 1 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.20 V F F VJ I = 3 0 A 1.62 V F T = C 1.12 V I = 1 0 A 150 F VJ I = 3 0 A 1.73 V F bridge output current T = 1 2 0 C T = 1 7 5 C 30 A I DAV C VJ rectangular d = V T = 1 7 5 C 0.81 V threshold voltage F0 VJ for power loss calculation only slope resistance r 31 m F thermal resistance junction to case 3 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 50 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 150 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 160 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 130 VJ t = 8,3 ms (60 Hz), sine V = 0 V 140 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 115 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 105 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 85 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 82 As R V = 4 0 0 V f = 1 MHz T = 25C 4 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c 2019 IXYS all rights reserved