TM V I R HiPerFET DSS D25 DS(on) IXFK 90 N 20 200 V 90 A 23 m Power MOSFETs IXFN 100 N 20 200 V 100 A 23 m IXFN 106 N 20 200 V 106 A 20 m N-Channel Enhancement Mode t 200 ns rr Avalanche Rated, High dv/dt, Low t rr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 V T = 25 C to 150 C 200 200 200 V DSS J G (TAB) V T = 25 C to 150 C R = 1 M 200 200 200 V D DGR J GS S V Continuous 20 20 20 V GS miniBLOC, SOT-227 B (IXFN) V Transient 30 30 20 V GSM E153432 S I T = 25 C, Chip capability 90 100 106 A D25 C G D I T = 80 C, limited by external leads 76 - A D80 C I T = 25 C, pulse width limited by T 360 400 424 A DM C JM G I T = 25 C5050A AR C S E T = 25 C 30 30 30 mJ AR C S D S dv/dt I I , di/dt 100 A/ s, V V , 5 5 5 V/ns S DM DD DSS G = Gate D = Drain T 150 C, R = 2 J G S = Source TAB = Drain P T = 25 C 500 520 W D C Either Source terminal at miniBLOC can be used as Main or Kelvin Source T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg l International standard packages T 1.6 mm (0.063 in) from case for 10 s 300 - C JEDEC TO-264 AA, epoxy meet L UL 94 V-0, flammability classification V 50/60 Hz, RMS t = 1 min - 2500 V~ ISOL miniBLOC with Aluminium nitride I 1 mA t = 1 s - 3000 V~ ISOL isolation TM M Mounting torque 0.9/6 1.5/13 Nm/lb.in. Low R HDMOS process d DS (on) Terminal connection torque - 1.5/13 Nm/lb.in. Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Weight 10 30 g rated Low package inductance Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values Applications (T = 25 C, unless otherwise specified) J DC-DC converters min. typ. max. Synchronous rectification V V = 0 V, I = 1 mA 200 V Battery chargers DSS GS D Switched-mode and resonant-mode V V = V , I = 8 mA 2 4 V GH(th) DS GS D power supplies I V = 20 V , V = 0 200 nA GSS GS DC DS DC choppers Temperature and lighting controls I V = 0.8 V T = 25 C 400 A DSS DS DSS J Low voltage relays V = 0 V T = 125 C2mA GS J R V = 10 V, I = 0.5 I Advantages DS(on) GS D D25 Pulse test, t 300 s, IXFK90N20 0.023 Easy to mount duty cycle d 2 % IXFN100N20 0.023 Space savings IXFN106N20 0.020 High power density IXYS reserves the right to change limits, test conditions, and dimensions. 92804H (7/97) 2000 IXYS All rights reserved 1 - 4IXFK100N20 IXFN90N20 IXFN106N20 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 60 S fs DS D D25 C 9000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1600 pF oss GS DS C 590 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 80 ns r GS DS DSS D D25 t R = 1 (External), 75 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 30 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 380 nC A2 2.00 2.10 .079 .083 g(on) b 1.12 1.42 .044 .056 Q V = 10 V, V = 0.5 V , I = 0.5 I 70 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 Q 190 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-264 AA 0.25 K/W thJC e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R TO-264 AA 0.15 K/W thCK K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 R miniBLOC, SOT-227 B 0.24 K/W L1 2.29 2.59 .090 .102 thJC P 3.17 3.66 .125 .144 R miniBLOC, SOT-227 B 0.05 K/W thCK Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 Source-Drain Diode Characteristic Values S 6.04 6.30 .238 .248 (T = 25 C, unless otherwise specified) T 1.57 1.83 .062 .072 J Symbol Test Conditions min. typ. max. I V = 0 V IXFK90N20 90 A S GS miniBLOC, SOT-227 B IXFN100N20 100 A IXFN106N20 106 A IXFK90N20 I Repetitive IXFN100N20 360 A SM pulse width limited by T IXFN106N20 424 A JM V I = 100 A, V = 0 V, 1.5 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t 200 ns rr Q I = 50 A, -di/dt = 100 A/ s, V = 100 V 3 C RM F R I 38 A M4 screws (4x) supplied RM Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025