TM TM Polar HiPerFET V = 900V IXFN40N90P DSS Power MOSFETs I = 33A D25 R < 230m DS(on) t < 300ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 900 V DSS J V T = 25C to 150C, R = 1M 900 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C33 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 80 A S = Source DM C JM I T = 25C20 A A C Either Source Terminal S can be used as the Source Terminal or the Kelvin Source E T = 25C 2.5 J AS C (Gate Return) Terminal. dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25C 695 W D C T -55 to +150 C Features J T 150 C JM z T -55 to +150 C International Standard Package stg z Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ z miniBLOC with Aluminum Nitride ISOL I 1mA, t = 1s 3000 V~ Isolation ISOL z Low R and Q DS(on) G M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. z d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Low Package Inductance z Weight 30 g Fast Intrinsic Rectifier Advantages z High Power Density z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 900 V DSS GS D Applications V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z I V = 30V, V = 0V 200 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 50 A z DSS DS DSS GS DC-DC Converters T = 125C 3.5 mA z J Laser Drivers z R V = 10V, I = 20A, Note 1 230 m AC and DC Motor Drives DS(on) GS D z Robotics and Servo Controls 2011 IXYS CORPORATION, All Rights Reserved DS100062A(10/11) IXFN40N90P Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 20A, Note 1 18 30 S fs DS D C 14 nF iss C V = 0V, V = 25V, f = 1MHz 896 pF oss GS DS C 58 pF rss R Gate Input Resistance 1.5 Gi t 53 ns d(on) Resistive Switching Times t 50 ns r V = 10V, V = 0.5 V , I = 20A GS DS DSS D t 77 ns d(off) R = 1 (External) G (M4 screws (4x) supplied) t 46 ns f Q 230 nC g(on) Q V = 10V, V = 0.5 V , I = 20A 70 nC gs GS DS DSS D Q 100 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 40 A S GS I Repetitive, Pulse Width Limited by T 160 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 20A, -di/dt = 100A/s, F I 14.0 A RM V = 100V, V = 0V R GS Q 1.7 C RM Note: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537