TM V I R HiPerFET DSS D25 DS(on) Power MOSFETs IXFN 44N50Q 500 V 44 A 120 m IXFN 48N50Q 500 V 48 A 100 m Q-Class t 250 ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 500 V DSS J S V T = 25C to 150C R = 1 M 500 V G DGR J GS V Continuous 20 V GS V Transient 30 V GSM S I T = 25C 44N50 44 A D D25 C G = Gate D = Drain 48N50 48 A S = Source I T = 25C, pulse width limited by T 44N50 176 A DM C JM 48N50 192 A Either Source terminal at miniBLOC can be used as Main or Kelvin Source I T = 25C48A AR C Features E T = 25C 60 mJ AR C IXYS advanced low Q process E 2.5 mJ g AS Low gate charge and capacitances dv/dt I I , di/dt 100 A/s, V V , 15 V/ns S DM DD DSS - easier to drive T 150C, R = 2 J G -faster switching Unclamped Inductive Switching (UIS) P T = 25C 500 W D C rated T -55 to +150 C Low R J DS (on) T 150 C Fast intrinsic diode JM T -55 to +150 C International standard package stg miniBLOC with Aluminium nitride V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL isolation for low thermal resistance I 1 mA t = 1 s 3000 V~ ISOL Low terminal inductance (<10 nH) and M Mounting torque 1.5/13 Nm/lb.in. d stray capacitance to heatsink (<35pf) Terminal connection torque 1.5/13 Nm/lb.in. Molding epoxies meet UL 94 V-0 Weight 30 g flammability classification Applications Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) DC-DC converters J min. typ. max. Battery chargers Switched-mode and resonant-mode V V = 0 V, I = 1 mA 500 V DSS GS D power supplies V V = V , I = 4 mA 2.0 4.0 V GS(th) DS GS D DC choppers I V = 20 V , V = 0 100 nA Temperature and lighting controls GSS GS DC DS I V = V T = 25C 100 A DSS DS DSS J Advantages V = 0 V T = 125C2mA GS J Easy to mount R V = 10 V, I = 0.5 I 44N50 120 Space savings DS(on) GS D D25 48N50 100 High power density Pulse test, t 300 s, duty cycle d 2 % 2003 IXYS All rights reserved DS98715B(08/03)IXFN 44N50Q IXFN 48N50Q Symbol Test Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. g V = 20 V I = 0.5 I , pulse test 30 42 S fs DS D D25 C 7000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 960 pF oss GS DS C 230 pF rss t 33 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 22 ns r GS DS DSS D D25 t R = 4.7 (External), 75 ns M4 screws (4x) supplied d(off) G t 10 ns Dim. Millimeter Inches f Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 Q 190 nC g(on) B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 D 4.09 4.29 0.161 0.169 Q 86 nC E 4.09 4.29 0.161 0.169 gd F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 R 0.26 K/W thJC H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 R 0.05 K/W thCK K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 Source-Drain Diode Characteristic Values P 4.95 5.97 0.195 0.235 (T = 25C, unless otherwise specified) J Q 26.54 26.90 1.045 1.059 Symbol Test Conditions min. typ. max. R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 I V = 0 V 48 A S GS U -0.05 0.1 -0.002 0.004 I Repetitive pulse width limited by T 192 A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t 250 ns rr Q I = 25A, -di/dt = 100 A/s, V = 100 V 1.0 C RM F R I 10 A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343