TM IXFN 48N60P V = 600 V PolarHV HiPerFET DSS I = 40 A D25 Power MOSFET R 140 m DS(on) N-Channel Enhancement Mode t 200 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V DSS J miniBLOC, SOT-227 B (IXFN) V T = 25C to 150C R = 1 M 600 V E153432 DGR J GS S V Continuous 30 V GSS G V Transient 40 V GSM I T = 25C40A D25 C I T = 25C, pulse width limited by T 110 A DM C JM S I T = 25C48A D AR C E T = 25C70mJ AR C G = Gate D = Drain E T = 25C 2.0 J AS C S = Source dv/dt I I , di/dt 100 A/s, V V , 10 V/ns Either Source terminal S can be used as the S DM DD DSS Source terminal or the Kelvin Source (gate T 150C, R = 2 J G return) terminal. P T = 25C 625 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International standard package T 1.6 mm (0.062 in.) from case for 10 s 300 C L Encapsulating epoxy meets V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL UL 94 V-0, flammability classification I 1 mA t = 1 s 3000 V~ ISOL miniBLOC with Aluminium nitride isolation M Mounting torque 1.5 / 13 Nm/lb.in. d z Fast recovery diode Terminal connection torque 1.5 / 13 Nm/lb.in. z Unclamped Inductive Switching (UIS) Weight 30 g rated z Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values Advantages (T = 25C, unless otherwise specified) Min. Typ. Max. J z Easy to mount BV V = 0 V, I = 250 A 600 V DSS GS D z Space savings z V V = V , I = 8 mA 3.0 5.5 V High power density GS(th) DS GS D I V = 30 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125C 1000 A GS J R V = 10 V, I = 4 A 140 m DS(on) GS D Pulse test, t 300 s, duty cycle d 2 % DS99337E(03/06) 2006 IXYS All rights reserved IXFN 48N60P Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J SOT-227B (IXFN) Outline Min. Typ. Max. g V = 20 V I = 24 A, pulse test 35 53 S fs DS D C 8860 pF iss C V = 0 V, V = 25 V, f = 1 MHz 850 pF oss GS DS C 60 pF rss t 30 ns d(on) t V = 10 V, V = 24 A 25 ns r GS DS t R = 2 (External) 85 ns d(off) G t 22 ns f Q 150 nC g(on) Q V = 10 V, V = 0.5 V , I = 24 A 50 nC gs GS DS DSS D Q 50 nC gd R 0.2 C/W thJC R SOT-227B 0.05 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 48 A S GS I Repetitive 110 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 200 ns rr F Q V = 100V 0.8 C RM R I 6.0 A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2