The IXFN62N80Q3 is a 62A, 800V power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) from IXYS Corporation. It features an N-Channel design, is RoHS-compliant, and is AEC-Q101 qualified. It has an integrated antiparallel fast-recovery diodes, a maximum drain-source on-resistance of only 0.157 Ohm and a typical gate-source charge of 35nC. This MOSFET can be used in converter, inverter and motor drive applications requiring a low on-resistance, high gate charge, high current and high switching frequencies.