TM GenX3 600V IGBTs V = 600V IXGH30N60C3D1 CES w/ Diode I = 30A IXGT30N60C3D1 C110 V 3.0V CE(sat) t = 47ns fi(typ) High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V CES C E V T = 25C to 150C, R = 1M 600 V CGR J GE C (Tab) V Continuous 20 V GES V Transient 30 V TO-247 (IXGH) GEM I T = 25C 60 A C25 C I T = 110C 30 A C110 C I T = 110C 30 A F110 C I T = 25C, 1ms 150 A CM C G SSOA V = 15V, T = 125C, R = 5 I = 60 A C C (Tab) GE VJ G CM E (RBSOA) Clamped Inductive Load V CES P T = 25C 220 W G = Gate C = Collector C C E = Emitter Tab = Collector T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Features T Plastic Body for 10 seconds 260 C SOLD z M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Optimized for Low Switching Losses d z Square RBSOA Weight TO-268 4 g z Anti-Parallel Ultra Fast Diode TO-247 6 g z International Standard Packages Advantages z High Power Density z Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Applications I V = V , V = 0V 75 A CES CE CES GE z High Frequency Power Inverters T = 125C 1 mA J z UPS z I V = 0V, V = 20V 100 nA Motor Drives GES CE GE z SMPS V I = 20A, V = 15V, Note 1 2.6 3.0 V CE(sat) C GE z PFC Circuits T = 125C 1.8 V J z Battery Chargers z Welding Machines z Lamp Ballasts 2011 IXYS CORPORATION, All Rights Reserved DS100013B(05/11)IXGH30N60C3D1 IXGT30N60C3D1 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 9 30 S fs C CE C 915 pF ies C V = 25V, V = 0V, f = 1MHz 78 pF oes CE GE C 32 pF res Q 38 nC g Q I = 20A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES Q 17 nC gc t 16 ns d(on) Terminals: 1 - Gate 2,4 - Collector Inductive load, T = 25C t 26 ns J 3 - Emitter ri I = 20A, V = 15V E 0.27 mJ C GE on t V = 300V, R = 5 42 75 ns d(off) CE G t 47 ns Note 2 fi E 0.09 0.18 mJ off t 17 ns d(on) t Inductive load, T = 125C 28 ns ri J E 0.44 mJ I = 20A, V = 15V on C GE t 70 ns V = 300V, R = 5 d(off) CE G t 90 ns fi Note 2 E 0.33 mJ off R 0.56 C/W thJC R TO-247 0.21 C/W thCS TO-247 Outline Reverse Diode (FRED) 1 2 3 P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I I = 30A, V = 0V, -di /dt = 100A/s, T = 100C 4 A RM F GE F J t V = 100V T = 100C 100 ns e rr R J I = 1A, -di/dt = 100A/s, V = 30V 25 ns Terminals: 1 - Gate 2 - Collector F R 3 - Emitter R 0.9 C/W thJC Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 Notes: C .4 .8 .016 .031 1. Pulse test, t 300 s, duty cycle, d 2%. D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537