Advance Technical Information TM GenX3 600V IGBT V = 600V IXGH56N60A3 CES I = 56A C110 V 1.35V CE(sat) Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES C G V T = 25C to 150C, R = 1M 600 V G CGR J GE D C S E (TAB) V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 150 A C25 C E = Emitter TAB = Collector I T = 110C 56 A C110 C I T = 25C, 1ms 370 A CM C SSOA V = 15V, T = 125C, R = 5 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES P T = 25C 330 W C d Features T - 55 ... +150 C J T 150 C z JM Optimized for Low Conduction Losses T - 40 ... +150 C z stg International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Advantages M Mounting torque 1.13/10 Nm/lb.in. d z High Power Density Weight 6 g z Low Gate Drive Requirement Applications z Power Inverters z UPS Symbol Test Conditions Characteristic Values z Motor Drives (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J SMPS z BV I = 250A, V = 0V 600 V PFC Circuits CES C CE z Battery Chargers V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Welding Machines I V = V V = 0V 50 A z CES CE CES, GE Lamp Ballasts T = 125C 500 A z J Inrush Current Protection Circuits I V = 0V, V = 20V 100 nA GES CE GE V I = 44A, V = 15V, Note 1 1.22 1.35 V CE(sat) C GE T = 125C 1.22 V J 2009 IXYS CORPORATION, All Rights Reserved DS100174(08/09)IXGH56N60A3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 44A, V = 10V, Note 1 33 55 S fs C CE C 3950 pF ies C V = 25V, V = 0V, f = 1MHz 220 pF P oes CE GE 1 2 3 C 56 pF res Q 140 nC g Q I = 44A, V = 15V, V = 0.5 V 26 nC ge C GE CE CES Q 52 nC gc t 26 ns e d(on) Inductive load, T = 25C t 42 ns Terminals: 1 - Gate 2 - Drain J ri 3 - Source Tab - Drain I = 44A, V = 15V E 1.00 mJ C GE on Dim. Millimeter Inches V = 480V, R = 5 t 310 ns Min. Max. Min. Max. CE G d(off) Note 2 A 4.7 5.3 .185 .209 t 315 550 ns fi A 2.2 2.54 .087 .102 1 E 3.75 6.50 mJ A 2.2 2.6 .059 .098 off 2 b 1.0 1.4 .040 .055 t 24 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C b 2.87 3.12 .113 .123 t 42 ns J 2 ri C .4 .8 .016 .031 I = 44A, V = 15V E 2.00 mJ C GE on D 20.80 21.46 .819 .845 t V = 480V, R = 5 495 ns E 15.75 16.26 .610 .640 CE G d(off) e 5.20 5.72 0.205 0.225 Note 2 t 415 ns fi L 19.81 20.32 .780 .800 E 6.75 mJ L1 4.50 .177 off P 3.55 3.65 .140 .144 R 0.375 C/W Q 5.89 6.40 0.232 0.252 thJC R 4.32 5.49 .170 .216 R 0.21 C/W thCS S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537