V = 1700V High Voltage IXGK100N170 CES I = 100A IGBTs IXGX100N170 C90 V 3.0V CE(sat) TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1700 V CES J C V T = 25C to 150C, R = 1M 1700 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXGX) I T = 25C ( Chip Capability ) 170 A C25 C I Terminal Current Limit 160 A LRMS I T = 90C 100 A C90 C I T = 25C, 1ms 600 A CM C G G SSOA V = 15V, T = 125C, R = 1 I = 200 A GE VJ G CM C Tab E (RBSOA) Clamped Inductive Load 0.8 V CES t V = 15V, V = 1250V, T = 125C 10 s sc GE CE J G = Gate E = Emitter (SCSOA) R = 10, Non Repetitive G C = Collector Tab = Collector P T = 25C 830 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z Optimized for Low Conduction and T Maximum Lead Temperature for Soldering 300 C L Switching Losses T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z Short Circuit Capability z M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. High Current Handling Capability d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Power Inverters z UPS BV I = 3mA, V = 0V 1700 V CES C GE z Motor Drives V I = 8mA, V = V 3.0 5.0 V z GE(th) C CE GE SMPS z PFC Circuits I V = V , V = 0V 50 A CES CE CES GE z Welding Machines T = 125C 3 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 100A, V = 15V, Note 1 2.5 3.0 V CE(sat) C GE 2012 IXYS CORPORATION, All Rights Reserved DS100090A(01/12)IXGK100N170 IXGX100N170 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D B A g I = 60A, V = 10V, Note 1 36 64 S fs C CE Q S R C 9200 pF ies Q1 D C V = 25V, V = 0V, f = 1MHz 455 pF oes CE GE R1 C 150 pF res 1 2 3 L1 C Q 425 nC g L Q I = 100A, V = 15V, V = 0.5 V 65 nC ge C GE CE CES Q 186 nC J C A gc b c b2 b1 A1 e t 35 ns d(on) Resistive load, T = 25C J t 192 ns r I = 100A, V = 15V A C GE K D B P t 285 ns 4 d(off) V = 0.5 V , R = 1 CE CES G Terminals: 1 = Gate t 395 ns 2,4 = Collector f 3 = Emitter t 35 ns d(on) Resistive load, T = 125C J t 250 ns r I = 100A, V = 15V C GE t 285 ns V = 0.5 V , R = 1 d(off) CE CES G t 435 ns f R 0.15 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Note: 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537