TM GenX3 600V IGBT V = 600V IXGK64N60B3D1 CES I = 64A with Diode IXGX64N60B3D1 C110 V 1.8V CE(sat) Medium speed low Vsat PT t = 88ns fi(typ) IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE G V Continuous 20 V C GES (TAB) E V Transient 30 V GEM I T = 110C64A PLUS247 (IXGX) C110 C I T = 25C, 1ms 400 A CM C SSOA V = 15V, T = 125C, R = 3 I = 200 A GE VJ G CM (RBSOA) Clamped inductive load V 600V CE P T = 25C 460 W G G C C D C TAB S E T -55 ... +150 C J T 150 C JM G = Gate C = Collector T -55 ... +150 C E = Emitter TAB = Collector stg M Mounting torque (TO-264) 1.13 / 10 Nm/lb.in. d F Mounting force (PLUS247) 20..120 / 4.5..27 N/lb. C Features T Maximum lead temperature for soldering 300 C L z T 1.6mm (0.062 in.) from case for 10s 260 C Optimized for low conduction and SOLD switching losses Weight TO-264 10 g z Square RBSOA PLUS247 6 g z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters z I V = V 700 A UPS CES CE CES z V = 0V T = 125C 2.5 mA Motor Drives GE J z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits z V I = 50A, V = 15V, Note 1 1.59 1.80 V Battery Chargers CE(sat) C GE z Welding Machines z Lamp Ballasts 2008 IXYS CORPORATION, All rights reserved DS99939A(06/08) IXGK64N60B3D1 IXGX64N60B3D1 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 38 64 S fs C CE C 4750 pF ies C V = 25V, V = 0V, f = 1MHz 260 pF oes CE GE C 65 pF res Q 168 nC g Q I = 50A, V = 15V, V = 0.5 V 28 nC ge C GE CE CES Q 61 nC gc t 25 ns d(on) t 41 ns ri Inductive load, T = 25C J E 1.5 mJ on I = 50A, V = 15V C GE t 138 ns d(off) V = 480V, R = 3 CE G t 88 150 ns fi DIM INCHES MILLIMETERS MIN MAX MIN MAX E 1.0 1.9 mJ off A 0.185 0.209 4.70 5.31 t 24 ns A1 0.102 0.118 2.59 3.00 d(on) b 0.037 0.055 0.94 1.40 t 40 ns b1 0.087 0.102 2.21 2.59 ri Inductive load, T = 125C J b2 0.110 0.126 2.79 3.20 E 2.70 mJ on c 0.017 0.029 0.43 0.74 I = 50A,V = 15V C GE D 1.007 1.047 25.58 26.59 t 195 ns d(off) E 0.760 0.799 19.30 20.29 V = 480V, R = 3 CE G e .215 BSC 5.46 BSC t 131 ns fi J 0.000 0.010 0.00 0.25 E 1.95 mJ K 0.000 0.010 0.00 0.25 off L 0.779 0.842 19.79 21.39 L1 0.087 0.102 2.21 2.59 R 0.27 C/W thJC P 0.122 0.138 3.10 3.51 R 0.15 C/W thCS Q 0.240 0.256 6.10 6.50 Q1 0.330 0.346 8.38 8.79 R 0.155 0.187 3.94 4.75 R1 0.085 0.093 2.16 2.36 S 0.243 0.253 6.17 6.43 TM Reverse Diode (FRED) Characteristic Values PLUS247 (IXGX) Outline (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. V I = 60A, V = 0V, Note 1 2.1 V F F GE T = 150C 1.4 V J I I = 60A, V = 0V, T = 100C 8.3 A RM F GE J -di /dt = 100A/s, V = 100V F R t I = 1A, -di/dt = 200A/s, V = 30V 35 ns rr F R Terminals: 1 - Gate R 1.35 C/W thJC 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 Note 1: Pulse test, t 300s duty cycle, d 2%. 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537