TM GenX3 1200V V = 1200V IXGA12N120A3 CES IGBTs I = 12A IXGP12N120A3 C90 V 3.0V IXGH12N120A3 CE(sat) High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM D D (Tab) S I T = 25C 22 A C25 C TO-247 (IXGH) I T = 90C 12 A C90 C I T = 25C, 1ms 60 A CM C SSOA V = 15V, T = 125C, R = 10 I = 24 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES G P T = 25C 100 W C C D D (Tab) S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. z d Optimized for Low Conduction Losses z Weight TO-263 2.5 g International Standard Packages TO-220 3.0 g TO-247 6.0 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified Min. Typ. Max. J Applications BV I = 250A, V = 0V 1200 V CES C GE z Power Inverters V I = 250A, V = V 2.5 5.0 V z GE(th) C CE GE UPS z Motor Drives I V = V , V = 0V 10 A CES CE CES GE z SMPS T = 125C 275 A J z PFC Circuits I V = 0V, V = 20V 100 nA z GES CE GE Battery Chargers z V I = I , V = 15V, Note 1 2.40 3.0 V Welding Machines CE(sat) C C90 GE z T = 125C 2.75 V Lamp Ballasts J z Inrush Current Protection Circuits 2010 IXYS CORPORATION, All Rights Reserved DS100212B(11/10)IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-263 Outline g I = I , V = 10V, Note 1 5.2 8.8 S fs C C90 CE I V = 10V, V = 10V, Note 1 44 A C(on) GE CE C 550 pF ies C V = 25V, V = 0V, f = 1MHz 30 pF oes CE GE C 8 pF res Q 20.4 nC g Q I = I , V = 15V, V = 600V 3.1 nC 1 = Gate ge C C90 GE CE 2 = Collector Q 8.5 nC gc 3 = Emitter 4 = Collector t Resistive Switching Times, T = 25C 35 ns d(on) J t 140 ns r I = I , V = 15V C C90 GE t 62 ns d(off) V = 960V, R = 10 t CE G 1035 ns f t 35 ns d(on) Resistive Switching Times, T = 125C J t 167 ns r I = I , V = 15V C C90 GE t 70 ns d(off) V = 960V, R = 10 CE G t 1475 ns f R 1.25 C/W thJC R TO-247 0.21 C/W thCS TO-220 0.50 C/W TO-220 Outline Note 1. Pulse test, t 300 s, duty cycle, d 2%. Dim. Millimeter Inches TO-247 Outline Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 P b 2.87 3.12 .113 .123 1 2 3 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 1 = Gate 2 = Collector E 15.75 16.26 .610 .640 Pins: 1 - Gate 2 - Drain 3 = Emitter e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 e Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Terminals: 1 - Gate 2 - Collector 3 - Emitted S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537