TM
V = 600 V
IXGR 50N60B
HiPerFAST IGBT
CES
I =75 A
TM IXGR 50N60BD1
C25
ISOPLUS247
V = 2.5 V
CE(sat)
(Electrically Isolated Back Surface)
t =85 ns
fi(typ)
(D1)
Symbol Test Conditions Maximum Ratings
ISOPLUS 247
E153432
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
V Transient 30 V
G
GEM
C
E Isolated Backside*
I T = 25C 75 A
C25 C
I T = 110C 45 A
C110 C
I T = 25C, 1 ms 200 A
CM C
G = Gate, C = Collector
E = Emitter
SSOA V = 15 V, T = 125C, R = 10 I = 100 A
GE VJ G CM
(RBSOA) Clamped inductive load, L = 100 H @ 0.8 V
CES
* Patent pending
P T = 25C 250 W
C C
T -55 ... +150 C
J
Features
T 150 C
JM
T -55 ... +150 C
z
stg
DCB Isolated mounting tab
z
Meets TO-247AD package Outline
Maximum lead temperature for soldering 300 C
z
High current handling capability
1.6 mm (0.062 in.) from case for 10 s
z TM
Latest generation HDMOS process
V 50/60 Hz, RMS, t = 1minute leads-to-tab 2500 V
z
ISOL
MOS Gate turn-on
- drive simplicity
Weight 5g
Applications
Symbol Test Conditions Characteristic Values
(T = 25C, unless otherwise specified) z
J
Uninterruptible power supplies (UPS)
Min. Typ. Max.
z
Switched-mode and resonant-mode
V I = 250 A, V = V 50N60B 2.5 5.0 V power supplies
GE(th) C CE GE
z
I = 500 A 50N60BD1 2.5 5.0 V AC motor speed control
C
z
DC servo and robot drives
I V = 600V 50N60B 200 A
z
CES CE
DC choppers
V = 0 V 50N60BD1 650 A
GE
50N60B T = 125C 1 mA
J
50N60BD1 5 mA Advantages
z
I V = 0 V, V = 20 V 100 nA
GES CE GE Easy assembly
z
High power density
V I = I , V = 15 V 2.5 V
CE(sat) C T GE z
Very fast switching speeds for high
frequency applications
2004 IXYS All rights reserved
DS98730C(06/04)IXGR 50N60B
IXGR 50N60BD1
Symbol Test Conditions Characteristic Values
ISOPLUS 247 OUTLINE
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = I ; V = 10 V, 25 35 S
fs C T CE
Pulse test, t 300 s, duty cycle 2 %
C 4100 pF
ies
pF
C V = 25 V, V = 0 V, f = 1 MHz 300 pF
oes CE GE
C 50 pF
res
Q 110 nC
g
Q I = I , V = 15 V, V = 0.5 V 30 nC
ge C T GE CE CES
Q 35 nC
gc
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
t 50 ns
Inductive load, T = 25C
d(on) 4 no connection
J
t 50 ns
I = I , V = 15 V, L = 100uH
ri
C T GE
Dim. Millimeter Inches
V = 0.8 V , R = R = 2.7
CE CES G off
t 110 270 ns
Min. Max. Min. Max.
d(off)
Remarks: Switching times may
A 4.83 5.21 .190 .205
t 85 150 ns
fi
A 2.29 2.54 .090 .100
increase for V (Clamp) > 0.8 V ,
1
CE CES
A 1.91 2.16 .075 .085
2
higher T or increased R
E J G 3.0 4.0 mJ
off
b 1.14 1.40 .045 .055
b 1.91 2.13 .075 .084
1
t Inductive load, T = 125C 50 ns b 2.92 3.12 .115 .123
d(on) J 2
C 0.61 0.80 .024 .031
t I = I , V = 15 V, L = 100uH 60 ns
ri C T GE
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
V = 0.8 V , R = R = 2.7
E 3mJ
CE CES G off
on
e 5.45 BSC .215 BSC
t Remarks: Switching times may 200 ns
L 19.81 20.32 .780 .800
d(off)
increase for V (Clamp) > 0.8 V , L1 3.81 4.32 .150 .170
CE CES
t 250 ns
fi
Q 5.59 6.20 .220 .244
higher T or increased R
J G
R 4.32 4.83 .170 .190
E 4.2 mJ
off
R 0.5 K/W
thJC
R 0.15 K/W
thCK
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = I , V = 0 V, T = 150C 1.6 V
F F T GE J
Pulse test, t 300 ms, duty cycle 2 % 2.5 V
I I = I , V = 0 V, -di /dt = 100 A/ms,T = 100C 3.2 A
RM F T GE F J
V = 100 V ns
R
t I = 1 A; -di/dt = 200 A/ms; V = 30 V 35 ns
rr F R
R 0.85 K/W
thJC
Note: I ,= 50A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463