IXGH 10N170A V = 1700 V High Voltage CES IXGT 10N170A I = 10 A C25 IGBT V = 6.0 V CE(sat) t = 35 ns fi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE G V Continuous 20 V GES E C (TAB) V Transient 30 V GEM I T = 25C10A C25 C TO-247 AD (IXGH) I T = 90C5A C90 C I T = 25C, 1 ms 20 A CM C SSOA V = 15 V, T = 125C, R = 22 I = 20 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load 0.8 V G CES C E t T = 125C, V = 1200 V V = 15 V, R = 22 10 s SC J CE GE G G = Gate, C = Collector, E = Emitter, TAB = Collector P T = 25C 140 W C C T -55 ... +150 C J Features T 150 C JM z International standard packages T -55 ... +150 C stg JEDEC TO-268 and JEDEC TO-247 AD M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z High current handling capability z Very high frequency Maximum lead temperature for soldering 300 C z MOS Gate turn-on 1.6 mm (0.062 in.) from case for 10 s - drive simplicity Weight TO-247 6 g z Rugged NPT structure TO-268 4 g z Molding epoxies meet UL 94 V-0 flammability classification Applications z Pulser circuits Symbol Test Conditions Characteristic Values z AC motor speed control (T = 25C, unless otherwise specified) J z min. typ. max. DC servo and robot drives z DC choppers BV I = 250 A, V = 0 V 1700 V z CES C GE Uninterruptible power supplies (UPS) V I = 250 A, V = V 3.0 5.0 V z GE(th) C CE GE Switched-mode and resonant-mode power supplies I V = 0.8 V T = 25C25 A CES CE CES J V = 0 V Note 1 T = 125C 500 A GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE z High power density z V I = I , V = 15 V T = 25C 4.5 6.0 V Suitable for surface mounting CE(sat) C C90 GE J z T = 125C 5.2 V J Easy to mount with 1 screw, (isolated mounting screw hole) DS98991B(11/03) 2003 IXYS All rights reservedIXGH 10N170A IXGT 10N170A Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 20 V 3 5 S fs C C25 CE Note 2 P C 650 pF ies C V = 25 V, V = 0 V, f = 1 MHz 40 pF oes CE GE C 22 pF res Q 29 nC G Q I = I , V = 15 V, V = 0.5 V 5nC e GE C C90 GE CE CES Q 10 nC Dim. Millimeter Inches GC Min. Max. Min. Max. A 4.7 5.3 .185 .209 t 46 ns d(on) A 2.2 2.54 .087 .102 1 t 57 ns A 2.2 2.6 .059 .098 ri Inductive load, T = 25C 2 J b 1.0 1.4 .040 .055 t 190 360 ns d(off) I = I , V = 15 V b 1.65 2.13 .065 .084 C C25 GE 1 b 2.87 3.12 .113 .123 t 35 ns 2 fi R = 22 , V = 0.5 V G CE CES C .4 .8 .016 .031 E 0.38 0.8 mJ D 20.80 21.46 .819 .845 off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 t 48 ns d(on) L1 4.50 .177 t Inductive load, T = 125C 59 ns P 3.55 3.65 .140 .144 ri J Q 5.89 6.40 0.232 0.252 I = I , V = 15 V E 1.2 mJ C C25 GE on R 4.32 5.49 .170 .216 t 200 ns d(off) R = 22 , V = 0.5 V S 6.15 BSC 242 BSC G CE CES t 40 ns fi E 0.6 mJ off TO-268 Outline R 0.89 K/W thJC R (TO-247) 0.25 K/W thCK Notes:1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505