Preliminary Technical Information IXTN46N50L V = 500 V Linear Power MOSFET DSS I = 46 A With Extended FBSOA D D25 R 0.16 N-Channel Enhancement Mode DS(on) G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXTN) E153432 V T = 25C to 150C 500 V DSS J V T = 25C to 150C R = 1 M 500 V DGR J GS S G V Continuous 30 V GS V Transient 40 V GSM I T = 25C 46 A D25 C S I T = 25C, pulse width limited by T 100 A DM C JM D I T = 25C 46 A AR C E T = 25C 60 mJ G = Gate D = Drain AR C S = Source E T = 25C 1.5 J AS C Either Source terminal S can be used as the P T = 25C 700 W D C Source terminal or the Kelvin Source (gate T -55 to +150 C return) terminal. J T 150 C JM T -55 to +150 C stg Features V 50/60 Hz, RMS, T = 1 min 2500 V~ Designed for linear operation ISOL International standard package I 1 mA, T = 1 s 3000 V~ ISOL Molding epoxy meets UL94 V-0 M Mounting torque for Base Plate 1.5/13 Nm/lb.in. d flammability classification Terminal connection torque 1.3/11.5 Nm/lb.in. miniBLOC with Aluminium nitride Weight 30 g isolation Applications Programmable loads Current regulators DC-DC converters Battery chargers Symbol Test Conditions Characteristic Values DC choppers (T = 25C, unless otherwise specified) J Temperature and lighting controls Min. Typ. Max. BV V = 0 V, I = 1 mA 500 V Advantages DSS GS D Easy to mount V V = V , I = 250 A3 6V GS(th) DS GS D Space savings I V = 30 V, V = 0 V 200 nA GSS GS DS High power density I V = V T = 25C50 A DSS DS DSS J V = 0 V T = 125C1mA GS J R V = 20 V, I = 0.5 I 0.16 DS(on) GS D D25 Note 1 2007 IXYS CORPORATION, All rights reserved DS99399A(03/07)IXTN46N50L Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) SOT-227B (IXTN) Outline J Min. Typ. Max. g V = 10 V I = 0.5 I , Note 1 7 10 13 S fs DS D D25 C 7000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 900 pF oss GS DS C 170 pF rss t 40 ns d(on) t V = 15 V, V = 0.5 V , I = 0.5 I 50 ns r GS DS DSS D D25 t R = 2 (External), 80 ns d(off) G t 42 ns f Q 260 nC g(on) (M4 screws (4x) supplied) Q V = 15 V, V = 0.5 V , I = 0.5 I 85 nC gs GS DS DSS D D25 Q 125 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA V = 400 V, I = 0.6 A, T = 90C 240 W DS D C Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 46 A S GS I Repetitive pulse width limited by T 100 A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Note 1 t I = I , -dt/dt = 100 A/s, V = 100 V 600 ns rr F S R Note 1: Pulse test, t < 300 s, duty cycle, d 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537