TM PolarP V = - 200V IXTN90P20P DSS I = - 90A Power MOSFET D25 D R 44m DS(on) P-Channel Enhancement Mode G Avalanche Rated S miniBLOC S E153432 S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C - 200 V DSS J S V T = 25 C to 150 C, R = 1M - 200 V DGR J GS D V Continuous 20 V GSS V Transient 30 V GSM G = Gate D = Drain S = Source I T = 25 C - 90 A D25 C I T = 25 C, Pulse Width Limited by T - 270 A DM C JM Either Source Terminal S can be used as the Source Terminal or the Kelvin Source I T = 25 C - 90 A A C (Gate Return) Terminal. E T = 25 C 3.5 J AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 890 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL miniBLOC, with Aluminium Nitride I 1mA t = 1 second 3000 V~ ISOL Isolation TM M Mounting Torque 1.5/13 Nm/lb.in Rugged PolarP Process d Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Low Package Inductance Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = - 250A - 200 V DSS GS D High-Side Switches Push Pull Amplifiers V V = V , I = -1mA - 2.0 - 4.5 V GS(th) DS GS D DC Choppers I V = 20V, V = 0V 100 nA GSS GS DS Automatic Test Equipment Current Regulators I V = V , V = 0V - 50 A DSS DS DSS GS T = 125C - 250 A J R V = -10V, I = 0.5 I , Note 1 44 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS99934D(6/16) IXTN90P20P Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 30 51 S fs DS D D25 C 12 nF iss C V = 0V, V = - 25V, f = 1MHz 2210 pF oss GS DS C 250 pF rss t 32 ns d(on) Resistive Switching Times t 60 ns r V = -10V, V = 0.5 V , I = 0 .5 I GS DS DSS D D25 t 89 ns d(off) R = 1 (External) G t 28 ns f Q 205 nC g(on) (M4 screws (4x) supplied) Q V = -10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 Q 80 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 90 A S GS I Repetitive, Pulse Width Limited by T - 360 A SM JM V I = - 45A, V = 0V, Note 1 - 3.2 V SD F GS t 315 ns rr I = - 45A, -di/dt = -150A/ s F Q 6.6 C RM V = -100V, V = 0V R GS I - 42 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537