TM 1200V XPT IGBT V = 1200V IXYH40N120B3D1 CES TM GenX3 w/ Diode I = 40A C110 V 2.9V CE(sat) t = 183ns Extreme Light Punch Through fi(typ) IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 86 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 110C 25 A F110 C I T = 25C, 1ms 180 A CM C I T = 25C 20 A A C E T = 25C 400 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 80 A Features GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES z Optimized for 5-30kHZ Switching P T = 25C 480 W C C z Square RBSOA z T -55 ... +150 C Positive Thermal Coefficient of J Vce(sat) T 150 C JM z Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg z Avalanche Rated z T Maximum Lead Temperature for Soldering 300 C International Standard Package L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 6g z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Power Inverters z UPS BV I = 250A, V = 0V 1200 V CES C GE z Motor Drives V I = 250A, V = V 3.0 5.0 V z GE(th) C CE GE SMPS z PFC Circuits I V = V , V = 0V 50 A CES CE CES GE z Battery Chargers T = 125C 500 A J z Welding Machines z I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 40A, V = 15V, Note 1 2.4 2.9 V CE(sat) C GE T = 150C 3.1 V J 2013 IXYS CORPORATION, All Rights Reserved DS100413B(03/13)IXYH40N120B3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 13 22 S fs C CE C 1690 pF ies C V = 25V, V = 0V, f = 1MHz 157 pF P oes CE GE 1 2 3 C 47 pF res Q 87 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 38 nC gc t 22 ns e d(on) t 50 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 2.70 mJ I = 40A, V = 15V on C GE Dim. Millimeter Inches t 177 ns V = 0.5 V , R = 10 d(off) CE CES G Min. Max. Min. Max. t 183 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.60 3.00 mJ 1 f of A 2.2 2.6 .059 .098 2 t 24 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t 60 ns J ri b 2.87 3.12 .113 .123 2 I = 40A, V = 15V E 5.25 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 10 t 205 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 206 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.05 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.26 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.0 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.6 V J I 4 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J V = 300V T = 100C t 100 ns R J rr R 0.9 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537