th Date:- 12 May, 2015 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K1010MA600 & K1010MA650 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 6000-6500 V DRM V Non-repetitive peak off-state voltage, (note 1) 6000-6500 V DSM V Repetitive peak reverse voltage, (note 1) 6000-6500 V RRM V Non-repetitive peak reverse voltage, (note 1) 6100-6600 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Mean on-state current. T =55C, (note 2) 1130 A T(AV) sink I Mean on-state current. T =85C, (note 2) 790 A T(AV) sink I Mean on-state current. T =85C, (note 3) 440 A T(AV) sink I Nominal RMS on-state current. T =25C, (note 2) 2210 A T(RMS) sink I D.C. on-state current. T =25C, (note 4) 1970 A T(d.c.) sink I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 12.6 kA TSM p RM RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 14.0 kA TSM2 p RM 2 2 3 2 It I t capacity for fusing t =10ms, V =0.6V , (note 5) 79410 A s p RM RRM 2 2 3 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 98010 A s p RM Maximum rate of rise of on-state current (repetitive), (Note 6) 200 A/s di /dt T Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 2 W G(AV) P Peak forward gate power 30 W GM V Non-trigger gate voltage, (Note 7) 0.25 V GD T Operating temperature range -40 to +125 C HS T Storage temperature range -40 to +150 C stg Notes: - 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Cathode side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =2000A, I =2A, t 0.5s, T =125C. D DRM TM FG r case 7) Rated V . DRM Data Sheet. Types K1010MA600 and K1010MA650 Issue P1. Page 1 of 10 May, 2015 Medium Voltage Thyristor Types K1010MA600 and K1010MA650 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 2.50 I=1000A V TM TM V Threshold voltage - - 1.61 V 0 r Slope resistance - - 0.90 m T dv/dt Critical rate of rise of off-state voltage 1000 - - V =80% V , Linear ramp, gate o/c V/s D DRM I Peak off-state current - - 150 Rated V mA DRM DRM I Peak reverse current - - 150 Rated V mA RRM RRM V Gate trigger voltage - - 3.0 V GT T =25C, V =10V, I =3A j D T I Gate trigger current - - 300 mA GT I Holding current - - 1000 T=25C mA H j t Gate controlled turn-on delay time - 0.6 1.0 gd I =2A, t =0.5s, V =67%V , FG r D DRM s I =1000A, di/dt=10A/s, T =25C TM j t Turn-on time - 1.6 2.5 gt Q Recovered Charge - 6200 7000 C rr Q Recovered Charge, 50% chord - 2750 - C ra I =1000A, t =2000s, di/dt=10A/s, TM p V =100V r I Reverse recovery current - 150 155 A rm t Reverse recovery time, 50% chord - 37 - s rr I =1000A, t =1000s, di/dt=10A/s, TM p 600 - 850 V =100V, V =80%V , dV /dt=20V/s r dr DRM dr (Note 2) t Turn-off time s q I =1000A, t =1000s, di/dt=10A/s, TM p 850 - 1150 V =100V, V =80%V , dV /dt=200V/s r dr DRM dr (Note 2) - - 0.015 Double side cooled K/W Thermal resistance, junction to R - - 0.035 Cathode side cooled K/W thJK heatsink - - 0.027 Anode side cooled K/W F Mounting force 24 - 32 (Note 3) kN WWeight - 540 - kg t Notes: - 1) Unless otherwise stated T =125C. j 2) Standard test condition for tq dV /dt=20V/s. For other dV /dt values please consult factory. dr dr 3) For other clamp forces please consult factory. Data Sheet. Types K1010MA600 and K1010MA650 Issue P1. Page 2 of 10 May, 2015