LDA100 Optocoupler, Bidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description Breakdown Voltage BV 30 V CEO P The LDA100 is a bidirectional-input optocoupler Current Transfer Ratio (Typical) 300 % with a single-transistor output. Optically coupled Saturation Voltage 0.5 V technology provides a 3750V isolation barrier rms Input Control Current 1 mA between the input and the output. Approvals Features UL Recognized Component: File E76270 3750V Input/Output Isolation rms CSA Certified Component: Certificate 1175739 Low Drive Power Requirements EN/IEC 60950-1 Certified Component: (TTL/CMOS Compatible) TUV Certificate B 09 07 49410 006 No Moving Parts High Reliability Arc-Free With No Snubbing Circuits Ordering Information No EMI/RFI Generation Small 6-Pin Package, Thru-Hole or Surface Mount Part Number Description Machine Insertable, Wave Solderable LDA100 6-Pin DIP (50/Tube) Surface Mount Tape & Reel Version Available LDA100S 6-Pin Surface Mount (50/Tube) LDA100STR 6-Pin Surface Mount (1000/Reel) Applications Telecom Switching Pin Configuration Tip/Ring Circuits Modem Switching (Laptop, Notebook, Pocket Size) Loop Detect 1 6 A/K B Ringing Detect 2 5 Current Sensing A/K C 3 4 E Pb e3 DS-LDA100-R06 1 www.ixysic.comLDA100 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to Breakdown Voltage 30 V P the device. Functional operation of the device at conditions Input Control Current 50 mA beyond those indicated in the operational sections of this Peak (10ms) 1 A data sheet is not implied. Power Dissipation 1 Input 150 mW 2 Phototransistors 150 Isolation Voltage, Input to Output 3750 V rms Operational Temperature -40 to +85 C Storage Temperature -40 to +125 C 1 Derate linearly 1.33mW / C 2 Derate linearly 2mW / C Electrical Characteristics 25C (Unless Otherwise Noted) Parameters Conditions Symbol Min Typ Max Units Output Characteristics Phototransistor Breakdown Voltage I =10A BV 30 85 - V C CEO Phototransistor Dark Current V =5V, I =0mA I - - 500 nA CE F CEO Saturation Voltage I =2mA, I =1mA V - - 0.5 V C F CE(sat) Current Transfer Ratio I =1mA, V =0.5V CTR 33 300 - % F CE Output Capacitance 25V, f=1MHz C -6 - pF OUT Input Characteristics Input Control Current I =0.33mA, V =0.5V I -- 1 mA C CE F Input Voltage Drop I =5mA V 0.9 1.2 1.4 V F F Common Characteristics Input to Output Capacitance - C -3 - pF I/O Switching Characteristics 25C Characteristic Symbol Test Condition Typ Units Turn-On Time t 7 on V =5V, I =2mA, R =1K s CC F L Turn-Off Time t 20 off Switching Time Test Circuit V CC R I L F I F V Pulse Width=5ms V CE CE Duty Cycle=1% 90% 10% t t on off R06 2 www.ixysic.com