MG12150S-BN2MM IXYS

MG12150S-BN2MM electronic component of IXYS
MG12150S-BN2MM IXYS
MG12150S-BN2MM IGBT Modules
MG12150S-BN2MM  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MG12150S-BN2MM IGBT Modules across the USA, India, Europe, Australia, and various other global locations. MG12150S-BN2MM IGBT Modules are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. MG12150S-BN2MM
Manufacturer: IXYS
Category: IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Datasheet:
Price (USD)
1: USD 110.752 ea
Line Total: USD 110.75 
Availability : 0
  
QtyUnit Price
1$ 110.752

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 110.752

   
Manufacturer
Product Category
Category
Max. Off-State Voltage
Pulsed Collector Current
Collector Current
Mechanical Mounting
Electrical Mounting
Type Of Module
Semiconductor Structure
Topology
Gate-Emitter Voltage
Case
Technology
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MG12150S-BN2MM from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MG12150S-BN2MM and other electronic components in the IGBT Modules category and beyond.

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The MG12150S-BN2MM IGBT module is a dual half-bridge, introduced by IXYS. It uses two IGBTs—the transistors control the collector-emitter current for each half-bridge. This high-performance dual IGBT module is designed for high-power applications including induction heating, welding, traction motor drives, and AC voltage control. It has an integrated emitter control circuit for fast turn-on and a built-in diode for integrated snubber protection. The peak collector current is 150A while the maximum junction temperature is 175°C. The package has a metal base with fastening screws for easy installation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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