X-On Electronics has gained recognition as a prominent supplier of MID100-12A3 igbt modules across the USA, India, Europe, Australia, and various other global locations. MID100-12A3 igbt modules are a product manufactured by IXYS. We provide cost-effective solutions for igbt modules, ensuring timely deliveries around the world.

MID100-12A3

MID100-12A3 electronic component of IXYS
Images are for reference only
See Product Specifications
Part No.MID100-12A3
Manufacturer: IXYS
Category:IGBT Modules
Description: IXYS IGBT Modules 100 Amps 1200V
Datasheet: MID100-12A3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 60.4389
12 : USD 56.7729
30 : USD 54.9343
102 : USD 50.0983
252 : USD 48.3823
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 67.606
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Series
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the MID100-12A3 IGBT Modules at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MID100-12A3 IGBT Modules.

MID100-12A3 V= 1200V CES IGBT (NPT) Module I= 135A C25 VV= 2.2 CE(sat) Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~ 3600 low saturation voltage Solar inverter Industry standard outline low switching losses Medical equipment RoHS compliant switching frequency up to 30 kHz Uninterruptible power supply Soldering pins for PCB mounting square RBSOA, no latch up Air-conditioning systems Base plate: DCB ceramic high short circuit capability Welding equipment Reduced weight positive temperature coefficient for Switched-mode and resonant-mode Advanced power cycling easy parallelling power supplies MOS input, voltage controlled Inductive heating, cookers ultra fast free wheeling diodes Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reservedMID100-12A3 Ratings Free Wheeling Diode FWD Conditions Symbol Definition min. typ. max. Unit V T = 25C 1200 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 1200 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V1200 T = 25C 1 mA R R VJ V = V1200 T = C125 3 mA R VJ forward voltage drop V I = A75 T = 25C 2.50 V F F VJ 2.90 V I = A150 F I = A75 T = C125 1.80 V F VJ I = A150 2.10 V F average forward current T = C80 T = C150 75 A I FAV C VJ DC current d = 1 V threshold voltage T = C150 1.30 V F0 VJ for power loss calculation only slope resistance r 7.5 m F thermal resistance junction to case R 0.45 K/W thJC thermal resistance case to heatsink R 0.45 K/W thCH P total power dissipation T = 25C 280 W tot C max. forward surge current I t = 10 ms (50 Hz), sine V = 0 V T = 45C 700 A R FSM VJ junction capacitance C V = V600 f = 1 MHz T = 25C 30 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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