MID75-12A3 IXYS

MID75-12A3 electronic component of IXYS
MID75-12A3 IXYS
MID75-12A3 IGBT Modules
MID75-12A3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MID75-12A3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. MID75-12A3 IGBT Modules are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. MID75-12A3
Manufacturer: IXYS
Category: IGBT Modules
Description: IGBT Modules 75 Amps 1200V
Datasheet: MID75-12A3 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 57.6114
12$ 53.7381
30$ 51.4908
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 57.5878
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Height
Length
Series
Width
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MID75-12A3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MID75-12A3 and other electronic components in the IGBT Modules category and beyond.

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MID75-12A3 V= 1200V CES IGBT (NPT) Module I= 90A C25 VV= 2.2 CE(sat) Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~ 3600 low saturation voltage Solar inverter Industry standard outline low switching losses Medical equipment RoHS compliant switching frequency up to 30 kHz Uninterruptible power supply Soldering pins for PCB mounting square RBSOA, no latch up Air-conditioning systems Base plate: DCB ceramic high short circuit capability Welding equipment Reduced weight positive temperature coefficient for Switched-mode and resonant-mode Advanced power cycling easy parallelling power supplies MOS input, voltage controlled Inductive heating, cookers ultra fast free wheeling diodes Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reservedMID75-12A3 Ratings Free Wheeling Diode FWD Conditions Symbol Definition min. typ. max. Unit V T = 25C 1200 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 1200 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V1200 T = 25C 650 A R R VJ V = V1200 T = C125 2 mA R VJ forward voltage drop V I = A50 T = 25C 2.50 V F F VJ 3.00 V I = A100 F I = A50 T = C125 1.90 V F VJ I = A100 2.30 V F average forward current T = C80 T = C150 60 A I FAV C VJ DC current d = 1 V threshold voltage T = C150 1.30 V F0 VJ for power loss calculation only slope resistance r 12 m F thermal resistance junction to case R 0.66 K/W thJC thermal resistance case to heatsink R 0.66 K/W thCH P total power dissipation T = 25C 190 W tot C max. forward surge current I t = 10 ms (50 Hz), sine V = 0 V T = 45C 400 A R FSM VJ junction capacitance C V = V600 f = 1 MHz T = 25C 30 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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